Browsing by Author Mi, Y.Y.

Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
2006Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfacesDong, Y.F.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.; Wang, S.J.
2007Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGeMi, Y.Y.; Wang, S.J.; Chai, J.W.; Seng, H.L.; Pan, J.S.; Foo, Y.L.; Huan, C.H.A.; Ong, C.K. 
2006Effect of nitrogen doping on optical properties and electronic structures of SrTiO3 filmsMi, Y.Y.; Wang, S.J.; Chai, J.W.; Pan, J.S.; Huan, C.H.A.; Feng, Y.P. ; Ong, C.K. 
2006Energy-band alignments at LaAlO3 and Ge interfacesMi, Y.Y.; Wang, S.J.; Chai, J.W.; Pan, J.S.; Huan, A.C.H.; Ning, M.; Ong, C.K. 
2007Epitaxial LaAl O3 thin film on silicon: Structure and electronic propertiesMi, Y.Y.; Yu, Z.; Wang, S.J.; Lim, P.C.; Foo, Y.L.; Huan, A.C.H.; Ong, C.K. 
30-Dec-2005Evolution of Fermi level position and Schottky barrier height at Ni/MgO(0 0 1) interfaceMi, Y.Y.; Wang, S.J.; Dong, Y.F.; Chai, J.W.; Pan, J.S.; Huan, A.C.H.; Ong, C.K. 
15-May-2006First-principles studies on initial growth of Ni on MgO(0 0 1) surfaceDong, Y.F.; Wang, S.J.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.
2009Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric filmMi, Y.Y.; Wang, S.J.; Zegenhagen, J.; Chai, J.W.; Pan, J.S.; Huan, C.H.A.; Feng, Y.P. ; Ong, C.K. 
21-Jun-2007Growth studies of (2 2 0), (2 0 0) and (1 1 1) oriented MgO films on Si (0 0 1) without buffer layerNing, M.; Mi, Y.Y.; Ong, C.K. ; Lim, P.C.; Wang, S.J.
2007Thermal stability of nitrogen-doped SrTiO3 films: Electronic and optical properties studiesMi, Y.Y.; Yu, Z.; Wang, S.J.; Gao, X.Y. ; Wee, A.T.S. ; Ong, C.K. ; Huan, C.H.A.