Browsing by Author Mangelinck, D.

Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
Feb-2004Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometryMangelinck, D.; Lee, P.S.; Osipowitcz, T. ; Pey, K.L.
2000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
21-May-2001Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodesChi, D.Z.; Mangelinck, D.; Lahiri, S.K.; Lee, P.S. ; Pey, K.L.
Sep-2002Effect of ion implantation on layer inversion of Ni silicided poly-SiLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; Chan, L.
Jan-2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; See, A.
1999Formation and stability of Ni(Pt) silicide on(100)Si and (111)SiMangelinck, D.; Dai, J.Y.; Lahiri, S.K.; Ho, C.S.; Osipowicz, T. 
Dec-2000Improved NiSi salicide process using presilicide N2 + implant for MOSFETsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Wee, A.T.S. ; Chan, L.
Dec-2003In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °CLee, P.S.; Pey, K.L.; Mangelinck, D.; Ding, J. ; Chan, L.
Mar-2002Layer inversion of Ni(Pt)Si on mixed phase Si filmsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Osipowicz, T. ; See, A.
Mar-2000Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicidesLee, P.S.; Mangelinck, D.; Pey, K.L. ; Shen, Z.X. ; Ding, J. ; Osipowicz, T. ; See, A.
Jul-2001Micro-RBS study of nickel silicide formationSeng, H.L. ; Osipowicz, T. ; Lee, P.S.; Mangelinck, D.; Sum, T.C. ; Watt, F. 
Dec-2001New salicidation technology with Ni(Pt) alloy for MOSFETsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Chan, L.
Dec-2001Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantationLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Dai, J.Y.; See, A. 
5-Jun-2000Nickel-platinum alloy monosilicidation-induced defects in n-type siliconChi, D.Z.; Mangelinck, D.; Dai, J.Y.; Lahiri, S.K.; Pey, K.L. ; Ho, C.S.
2005On the morphological changes of Ni- and Ni(Pt)-silicidesLee, P.S.; Pey, K.L.; Mangelinck, D.; Chi, D.Z.; Osipowicz, T. 
Jun-2002Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si linesLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Dai, J.Y.; Chan, L.