Browsing by Author Maiti, C.K.

Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
Aug-2001Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layersSamanta, S.K.; Maikap, S.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K.
18-Sep-2000Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layersSenapati, B.; Samanta, S.K.; Maikap, S.; Bera, L.K. ; Maiti, C.K.
Feb-2002Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGexSamanta, S.K.; Bera, L.K. ; Benerjee, H.D.; Maiti, C.K.
Aug-2004Gate dielectrics on strained-Si/SiGe heterolayersMaiti, C.K.; Samanta, S.K. ; Chatterjee, S.; Dalapati, G.K.; Bera, L.K.
Aug-2001High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 filmsBera, L.K. ; Choi, W.K. ; Tan, C.S.; Samanta, S.K.; Maiti, C.K.
1-Mar-2003Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substratesSamanta, S.K.; Chatterjee, S.; Maikap, S.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K.
Nov-2001N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVDTan, C.S.; Choi, W.K. ; Bera, L.K. ; Pey, K.L. ; Antoniadis, D.A.; Fitzgerald, E.A.; Currie, M.T.; Maiti, C.K.
Jan-2006Rapid thermal oxidation of Ge-rich Si1-xGex heterolayersBera, M.K.; Chakraborty, S.; Das, R.; Dalapati, G.K.; Chattopadhyay, S.; Samanta, S.K. ; Yoo, W.J. ; Chakraborty, A.K.; Butenko, Y.; Šiller, L.; Hunt, M.R.C.; Saha, S.; Maiti, C.K.
Jan-2003Reliability of ultrathin (Samanta, S.K.; Chatterjee, S.; Choi, W.K.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K.
2001Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbideBera, L.K. ; Choi, W.K. ; McNeill, D.; Ray, S.K.; Chatterjee, S.; Maiti, C.K.