Browsing by Author Low, T.

Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
20-Sep-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L.
2005First principle study of Si and Ge band structure for UTB MOSFETs applicationsLow, T.; Feng, Y.P. ; Li, M.F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P.; Chan, L.; Kwong, D.L.
2003Germanium MOS: An Evaluation from Carrier Quantization and Tunneling CurrentLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Kwong, D.-L.; Chin, A.
2004Impact of metal gate work function on nano CMOS device performanceHou, Y.T. ; Low, T.; Xu, B.; Li, M.-F. ; Samudra, G. ; Kwong, D.L.
2004Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETsLow, T.; Li, M.F. ; Fan, W.J.; Ng, S.T.; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Chan, L.; Kwong, D.L.
May-2003Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFETLow, T.; Hou, Y.-T. ; Li, M.-F. 
May-2003Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFETLow, T.; Hou, Y.-T. ; Li, M.-F. 
2003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
Nov-2004Metal gate work function engineering on gate leakage of MOSFETsHou, Y.-T. ; Li, M.-F. ; Low, T.; Kwong, D.-L.
2006Modeling study of InSb thin film for advanced III-V MOSFET applicationsZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
1-Feb-2008Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performanceZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
15-Jul-2005Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistorsLow, T.; Li, M.F. ; Yeo, Y.C. ; Fan, W.J.; Ng, S.T.; Kwong, D.L.