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| Issue Date | Title | Author(s) |
| 20-Sep-2004 | Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors | Low, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L. |
| 2005 | First principle study of Si and Ge band structure for UTB MOSFETs applications | Low, T.; Feng, Y.P. ; Li, M.F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P.; Chan, L.; Kwong, D.L. |
| 2003 | Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current | Low, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Kwong, D.-L.; Chin, A. |
| 2004 | Impact of metal gate work function on nano CMOS device performance | Hou, Y.T. ; Low, T.; Xu, B.; Li, M.-F. ; Samudra, G. ; Kwong, D.L. |
| 2004 | Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs | Low, T.; Li, M.F. ; Fan, W.J.; Ng, S.T.; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Chan, L.; Kwong, D.L. |
| May-2003 | Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET | Low, T.; Hou, Y.-T. ; Li, M.-F. |
| May-2003 | Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET | Low, T.; Hou, Y.-T. ; Li, M.-F. |
| 2003 | Investigation of Performance Limits of Germanium Double-Gated MOSFETs | Low, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L. |
| Nov-2004 | Metal gate work function engineering on gate leakage of MOSFETs | Hou, Y.-T. ; Li, M.-F. ; Low, T.; Kwong, D.-L. |
| 2006 | Modeling study of InSb thin film for advanced III-V MOSFET applications | Zhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. |
| Nov-2005 | Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs | Low, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. |
| 1-Feb-2008 | Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance | Zhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. |
| 15-Jul-2005 | Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors | Low, T.; Li, M.F. ; Yeo, Y.C. ; Fan, W.J.; Ng, S.T.; Kwong, D.L. |
