1. ScholarBank@NUS
  2. Research Outputs

Browsing by Author Lou, C.L.

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 1 to 20 of 22  next >
Issue DateTitleAuthor(s)
Jul-1997A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET'sLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
1999An improved drain-current-conductance method with substrate back-biasingTan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
1997Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETsLou, C.L.; Song, J.; Tan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
1997Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structureJie, B.B.; Li, M.F. ; Lou, C.L.; Lo, K.F.; Chim, W.K. ; Chan, D.S.H. 
7-Sep-1997Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopyChim, W.K. ; Chan, D.S.H. ; Tao, J.M. ; Lou, C.L.; Leang, S.E.; Teow, C.K.
1997Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single deviceLou, C.L.; Tan, C.B.; Chim, W.K. ; Chan, D.S.H. 
1995Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
1995Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
Oct-1996Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stressesLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
Nov-1996Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gateLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
Aug-1997Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
Aug-1997Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
1999Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysisNg, T.H.; Chim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Liu, Y.Y.; Lou, C.L.; Leang, S.E.; Tao, J.M. 
1999Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysisNg, T.H.; Chim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Liu, Y.Y.; Lou, C.L.; Leang, S.E.; Tao, J.M. 
Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
May-1998Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressingQin, W.H.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
May-1998Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressingQin, W.H.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
1997Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETsLou, C.L.; Qin, W.H.; Chim, W.K. ; Chan, D.S.H. 
1997Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETsLou, C.L.; Qin, W.H.; Chim, W.K. ; Chan, D.S.H. 
Showing results 1 to 20 of 22  next >