Browsing by Author Lo, K.F.

Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
May-2001Analysis of the DCIV peaks in electrically stressed pMOSFETsJie, B.B.; Chim, W.K. ; Li, M.-F. ; Lo, K.F.
1999Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV methodNg, K.H.; Jie, B.B.; He, Y.D. ; Chim, W.K. ; Li, M.F. ; Lo, K.F.
Jul-1999DC voltage-voltage method to measure the interface traps in sub-micron MOSTsJie, B.B.; Li, M.F. ; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
1997Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structureJie, B.B.; Li, M.F. ; Lou, C.L.; Lo, K.F.; Chim, W.K. ; Chan, D.S.H. 
1999Energy dependence of interface trap density - investigated by the DCIV methodJie, B.B.; Li, M.F. ; Lo, K.F.
Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
1999New DC voltage-voltage method to measure the interface traps in deep sub-micron MOS transistorsJie, B.B.; Li, M.F. ; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
Nov-1999Role of hole fluence in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z.
2000Roles of primary hot hole and FN electron fluences in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.J. ; Lo, K.F.