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| Issue Date | Title | Author(s) |
| Mar-2011 | A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration | Tran, X.A.; Yu, H.Y.; Yeo, Y.C. ; Wu, L.; Liu, W.J.; Wang, Z.R.; Fang, Z.; Pey, K.L.; Sun, X.W.; Du, A.Y.; Nguyen, B.Y.; Li, M.F. |
| 2009 | A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs | Huang, D.; Liu, W.J.; Liu, Z.Y.; Liao, C.C.; Zhang, L.-F.; Gan, Z.; Wong, W.; Li, M.-F. |
| 2012 | A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture | Tran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y. |
| Apr-2012 | A self-rectifying HfO x-based unipolar RRAM with Nisi electrode | Tran, X.A.; Zhu, W.G.; Gao, B.; Kang, J.F.; Liu, W.J.; Fang, Z.; Wang, Z.R.; Yeo, Y.C. ; Nguyen, B.Y.; Li, M.F.; Yu, H.Y. |
| 2010 | Automatic ontology construction for manufacturing knowledge and information management | Hou, X.; Liu, W.J.; Ong, S.K. ; Nee, A.Y.C. |
| 2008 | Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides | Liu, W.J.; Liu, Z.Y.; Luo, Y.; Jiao, G.F.; Huang, X.Y.; Huang, D.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. |
| 2008 | Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques | Liu, Z.Y.; Huang, D.; Liu, W.J.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. |
| Sep-2011 | GRAONTO: A graph-based approach for automatic construction of domain ontology | Hou, X.; Ong, S.K. ; Nee, A.Y.C. ; Zhang, X.T.; Liu, W.J. |
| 1-Jul-2003 | Mutagenicity of polluted reservoir water and its reduction by a pilot-scale integrated biological treatment process | Hu, J.Y. ; Ong, S.L. ; Ng, W.J. ; He, B.P.; Liu, W.J.; Fang, Z.D.; Zhang, X.H.; Wang, Z.S. |
| 2009 | New insights of BTI degradation in MOSFETs with SiON gate dielectrics | Li, M.-F. ; Huang, D.; Liu, W.J.; Liu, Z.Y.; Huang, X.Y. |
| 2007 | On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric | Liu, W.J.; Liu, Z.Y.; Huang, D.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Shen, C.; Li, M.-F. |
| 2013 | Self-selection unipolar HfOx-Based RRAM | Tran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y. |
| 2009 | Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods | Liu, W.J.; Huang, D.; Sun, Q.Q.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. |
| Mar-2008 | Understand NBTI mechanism by developing novel measurement techniques | Li, M.-F. ; Huang, D.; Shen, C.; Yang, T.; Liu, W.J.; Liu, Z. |
