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Liu, W.
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Showing results 1 to 20 of 133
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Issue Date
Title
Author(s)
Apr-2011
1/f neural noise reduction and spike feature extraction using a subset of informative samples
Yang, Z.
;
Hoang, L.
;
Zhao, Q.
;
Keefer, E.
;
Liu, W.
Dec-2002
A framework for virtual enterprise control with the holonic manufacturing paradigm
Huang, B.
;
Gou, H.
;
Liu, W.
;
Li, Y.
;
Xie, M.
2013
A general framework for road marking detection and analysis
Qin, B.
;
Liu, W.
;
Shen, X.
;
Chong, Z.J.
;
Bandyopadhyay, T.
;
Ang Jr., M.H.
;
Frazzoli, E.
;
Rus, D.
31-Jan-2014
A His6-SUMO-eXact tag for producing human prepro-Urocortin 2 in Escherichia coli for raising monoclonal antibodies
Liew, O.W.
;
Ang, C.X.
;
Peh, Y.P.
;
Chong, P.C.J.
;
Ng, Y.X.
;
Hwang, L.-A.
;
Koh, X.Y.
;
Yip, Y.M.
;
Liu, W.
;
Richards, A.M.
1-Sep-2003
A multiple directional decision procedure for successive comparisons of treatment effects
Liu, W.
;
Kwong, K.-S.
Aug-2012
A new EC-PC threshold estimation method for in vivo neural spike detection
Yang, Z.
;
Liu, W.
;
Keshtkaran, M.R.
;
Zhou, Y.
;
Xu, J.
;
Pikov, V.
;
Guan, C.
;
Lian, Y.
2013
A system verification platform for high-density epiretinal prostheses
Chen, K.
;
Lo, Y.-K.
;
Yang, Z.
;
Weiland, J.D.
;
Humayun, M.S.
;
Liu, W.
2008
A user acceptance study on a plant mixed reality system for primary school children
Mei-Ling, C.L.
;
Theng, Y.-L.
;
Liu, W.
;
Cheok, A.D.
Apr-2013
AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
Liu, X.
;
Zhan, C.
;
Wai Chan, K.
;
Samuel Owen, M.H.
;
Liu, W.
;
Chi, D.Z.
;
Tan, L.S.
;
Chen, K.J.
;
Yeo, Y.-C.
Jun-2012
AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process
Liu, X.
;
Zhan, C.
;
Chan, K.W.
;
Liu, W.
;
Tan, L.S.
;
Chen, K.J.
;
Yeo, Y.-C.
2012
AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
Liu, X.
;
Zhan, C.
;
Chan, K.W.
;
Liu, W.
;
Tan, L.S.
;
Teo, K.L.
;
Chen, K.J.
;
Yeo, Y.-C.
1998
An analysis of temperature dependent photoluminescence line shapes in InGaN
Teo, K.L.
;
Colton, J.S.
;
Yu, P.Y.
;
Weber, E.R.
;
Li, M.F.
;
Liu, W.
;
Uchida, K.
;
Tokunaga, H.
;
Akutsu, N.
;
Matsumoto, K.
1997
An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells
Zhang, Y.
;
Li, M.
;
Liu, W.
;
Yen, A.C.
;
Sheng, T.T.
;
Zhao, S.P.
;
Wang, J.L.F.
1-Aug-2004
Assignment of deep levels causing yellow luminescence in GaN
Soh, C.B.
;
Chua, S.J.
;
Lim, H.F.
;
Chi, D.Z.
;
Tripathy, S.
;
Liu, W.
Apr-2010
Association of polymorphisms in genes regulating the corticotropin- releasing factor system with antidepressant treatment response
Binder, E.B.
;
Owens, M.J.
;
Liu, W.
;
Deveau, T.C.
;
Rush, A.J.
;
Trivedi, M.H.
;
Fava, M.
;
Bradley, B.
;
Ressler, K.J.
;
Nemeroff, C.B.
2015
Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
Liu, X.
;
Liu, Z.
;
Pannirselvam, S.
;
Pan, J.
;
Liu, W.
;
Jia, F.
;
Lu, Y.
;
Liu, C.
;
Yu, W.
;
He, J.
;
Tan, L.S.
2009
Boundary condition and initial value effects in the reaction-diffusion model of interface trap generation/recovery
Luo, Y.
;
Huang, D.
;
Liu, W.
;
Li, M.
1-Oct-2000
Calculation of critical values for Dunnett and Tamhane's step-up multiple test procedure
Kwong, K.S.
;
Liu, W.
10-Dec-2000
Center Manifolds for Invariant Sets
Chow, S.-N.
;
Liu, W.
;
Yi, Y.
1-Aug-2004
Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
Liu, W.
;
Soh, C.B.
;
Chen, P.
;
Chua, S.J.