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Liow, T.-Y.
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Showing results 1 to 20 of 39
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Issue Date
Title
Author(s)
2008
5 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Zhu, M.
;
Tan, B.L.-H.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Feb-2008
A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
Tan, K.-M.
;
Zhu, M.
;
Fang, W.-W.
;
Yang, M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Hoe, K.M.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yeo, Y.-C.
2007
A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
Tan, K.-M.
;
Zhu, M.
;
Fang, W.-W.
;
Yang, M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Hoe, K.M.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yeo, Y.-C.
Apr-2008
Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
Lee, R.T.-P.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Koh, A.T.-Y.
;
Zhu, M.
;
Lo, G.-Q.
;
Samudra, G.S.
;
Chi, D.Z.
;
Yeo, Y.-C.
2006
Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
Liow, T.-Y.
;
Tan, K.-M.
;
Chin, H.-C.
;
Lee, R.T.P.
;
Tung, C.-H.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Jul-2008
Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors
Tan, K.-M.
;
Fang, W.-W.
;
Yang, M.
;
Liow, T.-Y.
;
Lee, R.T.-P.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Sep-2006
Drive-current enhancement in FinFETs using gate-induced stress
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Tung, C.-H.
;
Samudra, G.S.
;
Yoo, W.-J.
;
Yeo, Y.-C.
Jul-2008
Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Zhu, M.
;
Tan, B.L.-H.
;
Balasubramanian, N.
;
Yeo, Y.-C.
2005
Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures
Liow, T.-Y.
;
Tan, K.-M.
;
Yeo, Y.-C.
;
Agarwal, A.
;
Du, A.
;
Tung, C.-H.
;
Balasubramanian, N.
Jan-2010
Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform
Ang, K.-W.
;
Liow, T.-Y.
;
Yu, M.-B.
;
Fang, Q.
;
Song, J.
;
Lo, G.-Q.
;
Kwong, D.-L.
2007
Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors
Lee, R.T.P.
;
Yang, L.-T.
;
Ang, K.-W.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Wong, A.S.-W.
;
Samudra, G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
Nov-2007
N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Tung, C.-H.
;
Samudra, G.S.
;
Balasubramanian, N.
;
Yeo, Y.-C.
Feb-2007
N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
Lee, R.T.P.
;
Lim, A.E.-J.
;
Tan, K.-M.
;
Liow, T.-Y.
;
Lo, G.-Q.
;
Samudra, G.S.
;
Chi, D.Z.
;
Yeo, Y.-C.
Jan-2008
Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
Lee, R.T.P.
;
Yang, L.-T.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Ang, K.-W.
;
Lai, D.M.Y.
;
Hoe, K.M.
;
Lo, G.-Q.
;
Samudra, G.S.
;
Chi, D.Z.
;
Yeo, Y.-C.
2008
Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
Lee, R.T.-P.
;
Koh, A.T.-Y.
;
Fang, W.-W.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Liow, T.-Y.
;
Chow, S.-Y.
;
Yong, A.M.
;
Hoong, S.W.
;
Lo, G.-Q.
;
Samudra, G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
2007
Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
Lee, R.T.P.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Ho, C.-S.
;
Hoe, K.-M.
;
Lai, M.Y.
;
Osipowicz, T.
;
Lo, G.-Q.
;
Samudra, G.
;
Chi, D.-Z.
;
Yeo, Y.-C.
25-Apr-2008
Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor
Tan, K.-M.
;
Liow, T.-Y.
;
Lee, R.T.P.
;
Zhu, M.
;
Hoe, K.-M.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Samudra, G.S.
;
Yeo, Y.-C.
2006
Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
Lee, R.T.P.
;
Liow, T.-Y.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Wong, H.-S.
;
Lim, P.-C.
;
Lai, D.M.Y.
;
Lo, G.-Q.
;
Tung, C.-H.
;
Samudra, G.
;
Chi, D.-Z.
;
Yeo, Y.-C.
May-2008
P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
Lee, R.T.-P.
;
Tan, K.-M.
;
Lim, A.E.-J.
;
Liow, T.-Y.
;
Samudra, G.S.
;
Chi, D.-Z.
;
Yeo, Y.-C.
2009
Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
Tan, K.-M.
;
Yang, M.
;
Fang, W.-W.
;
Lim, A.E.-J.
;
Lee, R.T.-P.
;
Liow, T.-Y.
;
Yeo, Y.-C.