1. ScholarBank@NUS
  2. Research Outputs

Browsing by Author Lin, Y.-R.

Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
2013High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applicationsLiu, B.; Gong, X.; Cheng, R. ; Guo, P.; Zhou, Q. ; Owen, M.H.S.; Guo, C.; Wang, L.; Wang, W.; Yang, Y.; Yeo, Y.-C. ; Wan, C.-T.; Chen, S.-H.; Cheng, C.-C.; Lin, Y.-R.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.
2011In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drainZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Lin, H.-Y.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2011In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization processZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, H.-Y.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
30-Apr-2013Neurovascular coupling: In vivo optical techniques for functional brain imagingLiao, L.-D. ; Tsytsarev, V.; Delgado-Martínez, I. ; Li, M.-L.; Erzurumlu, R.; Vipin, A. ; Orellana, J. ; Lin, Y.-R.; Lai, H.-Y.; Chen, Y.-Y.; Thakor, N.V. 
2011Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallizationZhang, X.; Guo, H.; Lin, H.-Y.; Ivana; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2011Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancementGong, X.; Ivana; Chin, H.-C.; Zhu, Z.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
Showing results 1 to 6 of 6