Browsing by Author Lin, W.H.

Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
Sep-2003Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEMPey, K.L.; Tung, C.H.; Radhakrishnan, M.K. ; Tang, L.J.; Sun, Y.; Wang, X.D.; Lin, W.H.
Mar-2002Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectricLin, W.H.; Pey, K.L. ; Dong, Z.; Chooi, S.Y.-M.; Zhou, M.S.; Ang, T.C.; Ang, C.H.; Lau, W.S.; Ye, J.H.
2004Gate dielectric degradation mechanism associated with DBIE evolutionPey, K.L.; Ranjan, R.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K. 
Mar-2004Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETsTang, L.J.; Pey, K.L.; Tung, C.H.; Radhakrishnan, M.K. ; Lin, W.H.
Apr-2002Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliabilityLin, W.H.; Pey, K.L. ; Dong, Z.; Lim, V.S.K.; Chooi, S.Y.M.; Zhou, M.S.; Ang, C.H.; Ang, T.C.; Lau, W.S.
1-Feb-2003Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer depositionHo, M.-Y.; Gong, H. ; Wilk, G.D.; Busch, B.W.; Green, M.L.; Voyles, P.M.; Muller, D.A.; Bude, M.; Lin, W.H.; See, A.; Loomans, M.E.; Lahiri, S.K.; Räisänen, P.I.
2002Physical analysis of Ti-migration in 33 Å gate oxide breakdownPey, K.L. ; Tung, C.H. ; Lin, W.H.; Radhakrishnan, M.K. 
6-Oct-2003Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistorsPey, K.L.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K. 
2004Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopyPey, K.L.; Tung, C.H.; Tang, L.J.; Ranjan, R.; Radhakrishnan, M.K. ; Lin, W.H.; Lombardo, S.; Palumbo, F.
2004Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxidesPalumbo, F.; Lombardo, S.; Pey, K.L.; Tang, L.J.; Tung, C.H.; Lin, W.H.; Radhakrishnan, M.K. ; Falci, G.
25-Nov-2002Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer depositionHo, M.-Y.; Gong, H. ; Wilk, G.D.; Busch, B.W.; Green, M.L.; Lin, W.H.; See, A.; Lahiri, S.K.; Loomans, M.E.; Räisänen, P.I.; Gustafsson, T.
May-2003The statistical distribution of percolation current for soft breakdown in ultrathin gate oxideLin, W.H.; Pey, K.L. ; Dong, Z.; Chooi, S.Y.M. ; Ang, C.H.; Zheng, J.Z.
May-2003The statistical distribution of percolation current for soft breakdown in ultrathin gate oxideLin, W.H.; Pey, K.L. ; Dong, Z.; Chooi, S.Y.M. ; Ang, C.H.; Zheng, J.Z.