Browsing by Author Lin, H.-Y.

Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2010A new self-aligned contact technology for III-V MOSFETsGuo, H.; Zhang, X.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Zhan, C.; Luo, G.-L.; Chang, C.-Y.; Lin, H.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2010III-V MOSFETs with a new self-aligned contactZhang, X.; Guo, H.; Ko, C.-H.; Wann, C.H.; Cheng, C.-C.; Lin, H.-Y.; Chin, H.-C.; Gong, X.; Lim, P.S.Y.; Luo, G.-L.; Chang, C.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Yeo., Y.-C. 
2011In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drainZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Lin, H.-Y.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2011In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization processZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, H.-Y.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2011Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallizationZhang, X.; Guo, H.; Lin, H.-Y.; Ivana; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
May-2011Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistorsZhang, X.; Guo, H.; Lin, H.-Y.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Luo, G.-L.; Chang, C.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Lim, P.S.Y.; Yeo, Y.-C. 
May-2012Self-reported myopia in Taiwan: 2005 Taiwan National Health Interview SurveyGuo, Y.-H.; Lin, H.-Y.; Lin, L.L.K.; Cheng, C.-Y.