Browsing by Author Lim, K.-G.

Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
15-May-2010Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5Fang, L.W.-W.; Zhao, R.; Li, M.; Lim, K.-G.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
2012Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materialsWang, W.; Loke, D.; Shi, L.; Zhao, R.; Yang, H.; Law, L.-T.; Ng, L.-T.; Lim, K.-G.; Yeo, Y.-C. ; Chong, T.-C.; Lacaita, A.L.
2011Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technologyFang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
May-2011Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reductionFang, L.W.-W.; Zhao, R.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
2010Silicides as new electrode/heater for compact integration of phase change memory with CMOSFang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
13-Dec-2010Superlatticelike dielectric as a thermal insulator for phase-change random access memoryLoke, D.; Shi, L.; Wang, W.; Zhao, R.; Ng, L.-T.; Lim, K.-G.; Yang, H.; Chong, T.-C.; Yeo, Y.-C. 
24-Jun-2011Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structuresLoke, D.; Shi, L.; Wang, W.; Zhao, R.; Yang, H.; Ng, L.-T.; Lim, K.-G.; Chong, T.-C.; Yeo, Y.-C.