Browsing by Author Liao, C.C.

Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)
2009A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETsHuang, D.; Liu, W.J.; Liu, Z.Y.; Liao, C.C.; Zhang, L.-F.; Gan, Z.; Wong, W.; Li, M.-F. 
2008Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxidesLiu, W.J.; Liu, Z.Y.; Luo, Y.; Jiao, G.F.; Huang, X.Y.; Huang, D.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. 
2008Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniquesLiu, Z.Y.; Huang, D.; Liu, W.J.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. 
Jul-2009Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)Chin, A.; Chang, M.F.; Lin, S.H.; Chen, W.B.; Lee, P.T.; Yeh, F.S.; Liao, C.C.; Li, M.-F. ; Su, N.C.; Wang, S.J.
2004High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technologyChin, A.; Kao, H.L.; Yu, D.S.; Liao, C.C.; Zhu, C. ; Li, M.-F. ; Zhu, S. ; Kwong, D.-L.
2009Improved retention and cycling characteristics of MONOS memory using charge-trapping engineeringChin, A.; Lin, S.H.; Yang, H.J.; Tsai, C.Y.; Yeh, F.S.; Liao, C.C.; Li, M.-F. 
2008Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C.C.; Chin, A.; Su, N.C.; Li, M.-F. ; Wang, S.J.
2007On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectricLiu, W.J.; Liu, Z.Y.; Huang, D.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Shen, C.; Li, M.-F. 
2009Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methodsLiu, W.J.; Huang, D.; Sun, Q.Q.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. 
Jun-2005The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETsYu, D.S.; Liao, C.C.; Cheng, C.F.; Chin, A. ; Li, M.F. ; McAlister, S.P.
Feb-2005Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devicesYu, D.S.; Chin, A. ; Liao, C.C.; Lee, C.F.; Cheng, C.F.; Li, M.F. ; Yoo, W.J. ; McAlister, S.P.
2005Very high κ and high density TiTaO MIM capacitors for analog and RF applicationsChiang, K.C.; Chin, A. ; Lai, C.H.; Chen, W.J.; Cheng, C.F.; Hung, B.F.; Liao, C.C.