Browsing by Author Latt, K.M.

Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
29-Sep-2000Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2Lee, Y.K.; Latt, K.M.; JaeHyung, K.; Osipowicz, T. ; Sher-Yi, C. ; Lee, K.
1-Dec-2001Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structureLatt, K.M.; Sher-Yi, C. ; Osipowicz, T. ; Lee, K.; Lee, Y.K.
15-Dec-2001Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxideLatt, K.M.; Lee, Y.K.; Seng, H.L. ; Osipowicz, T. 
7-Mar-2002Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structureLatt, K.M.; Park, H.S.; Seng, H.L. ; Osipowicz, T. ; Lee, Y.K.; Li, S.
15-Jun-2002Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealingLatt, K.M.; Lee, Y.K.; Osipowicz, T. ; Park, H.S.
21-Jun-2001Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structureLatt, K.M.; Lee, K.; Osipowicz, T. ; Lee, Y.K.
Jun-2000Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structureLee, Y.K.; Latt, K.M.; Osipowicz, T. ; Sher-Yi, C. 
Dec-2000Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO2Si structureLee, Y.K.; Latt, K.M.; Jaehyung, K.; Osipowicz, T. ; Chiam, S.-Y. ; Lee, K.
1-Oct-2002Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structureLatt, K.M.; Park, H.S.; Seng, H.L. ; Osipowicz, T. ; Lee, Y.K.
20-Jul-2001The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structureLatt, K.M.; Lee, Y.K.; Li, S.; Osipowicz, T. ; Seng, H.L.