Browsing by Author Lahiri, S.K.

Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
21-May-2001Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodesChi, D.Z.; Mangelinck, D.; Lahiri, S.K.; Lee, P.S. ; Pey, K.L.
Aug-2001Correlation between intermetallic thickness and roughness during solder reflowZuruzi, A.S.; Lahiri, S.K.; Burman, P. ; Siow, K.S.
1999Formation and stability of Ni(Pt) silicide on(100)Si and (111)SiMangelinck, D.; Dai, J.Y.; Lahiri, S.K.; Ho, C.S.; Osipowicz, T. 
Jun-2000Integrity of copper-tantalum nitride metallization under different ambient conditionsYap, K.P.; Gong, H. ; Dai, J.Y.; Osipowicz, T. ; Chan, L.H.; Lahiri, S.K.
1-Feb-2003Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer depositionHo, M.-Y.; Gong, H. ; Wilk, G.D.; Busch, B.W.; Green, M.L.; Voyles, P.M.; Muller, D.A.; Bude, M.; Lin, W.H.; See, A.; Loomans, M.E.; Lahiri, S.K.; Räisänen, P.I.
5-Jun-2000Nickel-platinum alloy monosilicidation-induced defects in n-type siliconChi, D.Z.; Mangelinck, D.; Dai, J.Y.; Lahiri, S.K.; Pey, K.L. ; Ho, C.S.
1999Study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applicationsLim, C.W.; Bourdillon, A.J. ; Gong, H. ; Lahiri, S.K.; Pey, K.L.; Lee, K.H.
25-Nov-2002Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer depositionHo, M.-Y.; Gong, H. ; Wilk, G.D.; Busch, B.W.; Green, M.L.; Lin, W.H.; See, A.; Lahiri, S.K.; Loomans, M.E.; Räisänen, P.I.; Gustafsson, T.