Browsing by Author Kong, E.

Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
Aug-2012A single-index quantile regression model and its estimationKong, E.; Xia, Y. 
Jan-2013Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealingIvana; Foo, Y.L.; Zhang, X.; Zhou, Q. ; Pan, J.; Kong, E.; Owen, M.H.S.; Yeo, Y.-C. 
2012Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal GateGong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Cheng, R. ; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2013Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETsKong, E.; Gong, X.; Guo, P.; Liu, B.; Yeo, Y.-C. 
Jul-2010Statistical modelling of nonlinear long-term cumulative effectsKong, E.; Tong, H.; Xia, Y. 
2012Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOTGong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2012Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technologyGong, X.; Zhu, Z.; Kong, E.; Cheng, R. ; Subramanian, S.; Goh, K.H.; Yeo, Y.-C. 
Mar-2007Variable selection for the single-index modelKong, E.; Xia, Y.