Browsing by Author Koh, A.T.-Y.

Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
2008A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistorsWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Lee, R.T.-P. ; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
2008Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistorsKoh, A.T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Lai, D.M.-Y.; Chi, D.-Z.; Hoe, K.-M.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
2008Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performanceLee, R.T.-P. ; Koh, A.T.-Y.; Fang, W.-W.; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Chow, S.-Y.; Yong, A.M.; Hoong, S.W.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
2007Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealingLee, R.T.-P. ; Koh, A.T.-Y.; Liu, F.-Y.; Fang, W.-W.; Liow, T.-Y.; Tan, K.-M.; Lim, P.-C.; Lim, A.E.-J.; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Lo, G.-Q.; Wang, X.; Low, D.K.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
2008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
Jul-2008Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidationWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2009The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressorsLee, R.T.P. ; Koh, A.T.-Y.; Tan, K.-M.; Liow, T.-Y.; Chi, D.Z.; Yeo, Y.-C.