Browsing by Author Ko, C.-H.

Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
2010A new self-aligned contact technology for III-V MOSFETsGuo, H.; Zhang, X.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Zhan, C.; Luo, G.-L.; Chang, C.-Y.; Lin, H.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
15-Jul-2013Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopyOwen, M.H.S.; Guo, C.; Chen, S.-H.; Wan, C.-T.; Cheng, C.-C.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.; Ivana; Zhang, Z.; Pan, J.S.; Yeo, Y.-C. 
2013High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applicationsLiu, B.; Gong, X.; Cheng, R. ; Guo, P.; Zhou, Q. ; Owen, M.H.S.; Guo, C.; Wang, L.; Wang, W.; Yang, Y.; Yeo, Y.-C. ; Wan, C.-T.; Chen, S.-H.; Cheng, C.-C.; Lin, Y.-R.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.
2010III-V MOSFETs with a new self-aligned contactZhang, X.; Guo, H.; Ko, C.-H.; Wann, C.H.; Cheng, C.-C.; Lin, H.-Y.; Chin, H.-C.; Gong, X.; Lim, P.S.Y.; Luo, G.-L.; Chang, C.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Yeo., Y.-C. 
2011In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drainZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Lin, H.-Y.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2011In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization processZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, H.-Y.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2011Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallizationZhang, X.; Guo, H.; Lin, H.-Y.; Ivana; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
May-2011Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistorsZhang, X.; Guo, H.; Lin, H.-Y.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Luo, G.-L.; Chang, C.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Lim, P.S.Y.; Yeo, Y.-C. 
2011Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancementGong, X.; Ivana; Chin, H.-C.; Zhu, Z.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C.