Browsing by Author Khoo, G.S.

Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
1995Chemisorption of Cl on the Si(100)-2×1 surfaceKhoo, G.S.; Ong, C.K. 
2-Dec-1991CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surfaceOng, C.K. ; Khoo, G.S.; Hattori, K.; Nakai, Y.; Itoh, N.
1993Defect processes in GaP: Implications for the behavior of excited surface defectsKhoo, G.S.; Ong, C.K. 
1994Energies for atomic emissions from defect sites on the Si surfaces: The effects of halogen adsorbatesKhoo, G.S.; Ong, C.K. ; Itoh, N.; Kanasaki, J.
1993H-induced passivation of GaAs(110)-Be surface-acceptor systemsKhoo, G.S.; Ong, C.K. 
1991Hydrogen passivation of aluminium atoms in crystalline siliconChia, L.S.; Goh, N.K.; Khoo, G.S.; Ong, C.K. 
1991Hydrogen passivation of aluminium atoms in crystalline siliconChia, L.S. ; Goh, N.K.; Khoo, G.S.; Ong, C.K.
1993Modeled microscopic structures of monatomic and diatomic Al on stepped and unstepped GaP(110) surfacesKhoo, G.S.; Ong, C.K. 
1993O- in GaP: A negative-U centreKhoo, G.S.; Ong, C.K. 
1993Relaxation and bond breaking at defect sites on GaP (110) surfaces by phonon-assisted multihole localizationKhoo, G.S.; Ong, C.K. ; Itoh, N.
1991The interstitial hydrogen atom in gallium phosphideWong, K.F.; Khoo, G.S.; Ong, C.K. 
1990The migration of self-interstitials in germaniumKhoo, G.S.; Ong, C.K. 
1993The multi-hole localization mechanism for particle emission from semiconductor surfacesKhoo, G.S.; Ong, C.K. ; Itoh, N.
1991The nature of the hydrogen-boron complex of crystalline SiOng, C.K. ; Khoo, G.S.
1991The nature of the hydrogen-phosphorus system in crystalline SiKhoo, G.S.; Ong, C.K. 
1992Theoretical studies of defect-initiated particle emission from GaP(110) surfaces: Basis for a new technique of generating perfect surfacesItoh, N.; Hattori, K.; Nakai, Y.; Kanasaki, J.; Okano, A.; Ong, C.K. ; Khoo, G.S.
1994Theoretical studies of halogen-semiconductor-surface interactions: The Cl/GaAs(110) systemKhoo, G.S.; Ong, C.K.