Browsing by Author Ivana

Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
2012A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETsZhang, X.; Ivana; Guo, H.X.; Gong, X.; Zhou, Q. ; Yeo, Y.-C. 
15-Jul-2013Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopyOwen, M.H.S.; Guo, C.; Chen, S.-H.; Wan, C.-T.; Cheng, C.-C.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.; Ivana; Zhang, Z.; Pan, J.S.; Yeo, Y.-C. 
2011Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETsIvana; Subramanian, S.; Kong, E.Y.-J.; Zhou, Q. ; Yeo, Y.-C. 
Dec-2012CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETsIvana; Kong, E.Y.-J.; Subramanian, S.; Zhou, Q. ; Pan, J.; Yeo, Y.-C. 
Jan-2013Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealingIvana; Foo, Y.L.; Zhang, X.; Zhou, Q. ; Pan, J.; Kong, E.; Owen, M.H.S.; Yeo, Y.-C. 
2012Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)Subramanian, S.; Ivana; Yeo, Y.-C. 
Feb-2012In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage SuppressionZhu, Z.; Gong, X.; Ivana; Yeo, Y.-C. 
2013Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistorsKong, E.Y.-J.; Ivana; Zhang, X.; Zhou, Q. ; Pan, J.; Zhang, Z.; Yeo, Y.-C. 
Nov-2012N-channel InGaAs field-effect transistors formed on germanium-on-insulator substratesIvana; Subramanian, S.; Owen, M.H.S.; Tan, K.H.; Loke, W.K.; Wicaksono, S.; Yoon, S.F.; Yeo, Y.-C. 
2011Pd-InGaAs as a new self-aligned contact material on InGaAsKong, E.Y.-J.; Zhang, X.; Ivana; Zhou, Q. ; Yeo, Y.-C. 
4-Jul-2011Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47AsIvana; Pan, J.; Zhang, Z.; Zhang, X.; Guo, H.; Gong, X.; Yeo, Y.-C. 
2011Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallizationZhang, X.; Guo, H.; Lin, H.-Y.; Ivana; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2012Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drainSubramanian, S.; Ivana; Zhou, Q. ; Zhang, X.; Balakrishnan, M.; Yeo, Y.-C. 
2011Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancementGong, X.; Ivana; Chin, H.-C.; Zhu, Z.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
Apr-2011Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reductionGong, X.; Chin, H.-C.; Koh, S.-M.; Wang, L.; Ivana; Zhu, Z.; Wang, B.; Chia, C.K.; Yeo, Y.-C. 
2012Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layerHan, G. ; Su, S.; Wang, L.; Wang, W.; Gong, X.; Yang, Y.; Ivana; Guo, P.; Guo, C.; Zhang, G.; Pan, J.; Zhang, Z.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
7-Mar-2013Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junctionGuo, P.; Yang, Y.; Cheng, Y.; Han, G. ; Pan, J.; Ivana; Zhang, Z.; Hu, H.; Shen, Z.X.; Chia, C.K.; Yeo, Y.-C.