Browsing by Author Huan, A.C.H.

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Issue DateTitleAuthor(s)
2006Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfacesDong, Y.F.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.; Wang, S.J.
2006Adsorption and diffusion of Co on the Si(001) surfacePeng, G.W. ; Huan, A.C.H.; Tok, E.S. ; Feng, Y.P. 
2008Band alignment of yttrium oxide on various relaxed and strained semiconductor substratesChiam, S.Y.; Chim, W.K. ; Pi, C.; Huan, A.C.H.; Wang, S.J.; Pan, J.S.; Turner, S.; Zhang, J.
Sep-2007Band engineering in the high-k dielectrics gate stacksWang, S.J.; Dong, Y.F.; Feng, Y.P. ; Huan, A.C.H.
2006Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin filmsZheng, Y.B.; Wang, S.J.; Huan, A.C.H.; Tripathy, S.; Chai, J.W.; Kong, L.B. ; Ong, C.K. 
19-Aug-2003Characterization of electrolessly deposited copper and nickel nanofilms on modified Si(100) surfaceZhang, Y. ; Ang, S.S. ; Tay, A.A.O. ; Xu, D.; Kang, E.T. ; Neoh, K.G. ; Chong, L.P.; Huan, A.C.H.
2006Chemical tuning of band alignments for metal gate/high- κ oxide interfacesDong, Y.F.; Wang, S.J.; Feng, Y.P. ; Huan, A.C.H.
12-Mar-2001Crystalline zirconia oxide on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Chai, J.W.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
2006Dimer rotation on the carbon-induced Si (001) -c (4×4) structurePeng, G.W. ; Sun, Y.Y. ; Huan, A.C.H.; Feng, Y.P. 
2002Dynamic growth mechanism and interface structure of crystalline zirconia on siliconWang, S.J.; Huan, A.C.H.; Ong, C.K. 
2006Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectricWang, S.J.; Chai, J.W.; Dong, Y.F.; Feng, Y.P. ; Sutanto, N.; Pan, J.S.; Huan, A.C.H.
2008Effects of annealing on the valence band offsets between hafnium aluminate and siliconChiam, S.Y.; Chim, W.K. ; Ren, Y.; Pi, C.; Pan, J.S.; Huan, A.C.H.; Wang, S.J.; Zhang, J.
Mar-2001Electrical properties of crystalline YSZ films on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
2006Energetic and magnetic properties of transition-metal nanowire encapsulated BxCyNz composite nanotubesPeng, G.W. ; Huan, A.C.H.; Feng, Y.P. 
2006Energy-band alignments at LaAlO3 and Ge interfacesMi, Y.Y.; Wang, S.J.; Chai, J.W.; Pan, J.S.; Huan, A.C.H.; Ning, M.; Ong, C.K. 
2007Epitaxial LaAl O3 thin film on silicon: Structure and electronic propertiesMi, Y.Y.; Yu, Z.; Wang, S.J.; Lim, P.C.; Foo, Y.L.; Huan, A.C.H.; Ong, C.K. 
30-Dec-2005Evolution of Fermi level position and Schottky barrier height at Ni/MgO(0 0 1) interfaceMi, Y.Y.; Wang, S.J.; Dong, Y.F.; Chai, J.W.; Pan, J.S.; Huan, A.C.H.; Ong, C.K. 
29-May-2006Evolution of Schottky barrier heights at Ni/HfO2 interfacesLi, Q.; Dong, Y.F.; Wang, S.J.; Chai, J.W.; Huan, A.C.H.; Feng, Y.P. ; Ong, C.K. 
2006Evolution of Schottky barrier heights at Ni/HfO2interfacesLi, Q. ; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. ; Wang, S.J.; Chai, J.W.; Huan, A.C.H.
11-Jul-2007First-principles simulations of Si vacancy diffusion in erbium silicidePeng, G.W. ; Feng, Y.P. ; Bouville, M.; Chi, D.Z.; Huan, A.C.H.; Srolovitz, D.J.