Browsing by Author Ho, C.S.

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Issue DateTitleAuthor(s)
Jul-2007Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN filmsZhou, H.; Pan, H. ; Chan, T.K. ; Ho, C.S.; Feng, Y. ; Chua, S.-J.; Osipowicz, T. 
2000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
2004Crystallographic orientation of Ta/TaN bilayer and its effect on seed and bulk Cu 〈111〉 formationHo, C.S.; Liew, S.L.; See, A.; Lim, C.Y.H. 
11-Jul-2012Current 25-hydroxyvitamin D assays: Do they pass the test?Ong, L.; Saw, S.; Sahabdeen, N.B.; Tey, K.T.; Ho, C.S.; Sethi, S.K. 
1997Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technologyHo, C.S.; Pey, K.L.; Wong, H.; Karunasirf, R.P.G. ; Chua, S.J. ; Lee, K.H.; Tang, Y.; Wong, S.M.; Chan, L.H.
Sep-2002Evaluation of the silicon capping technique in SIMSNg, C.M.; Wee, A.T.S. ; Huan, C.H.A.; Ho, C.S.; Yakovlev, N.; See, A. 
1999Formation and stability of Ni(Pt) silicide on(100)Si and (111)SiMangelinck, D.; Dai, J.Y.; Lahiri, S.K.; Ho, C.S.; Osipowicz, T. 
10-May-2006Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealingLiew, S.L.; Balakrisnan, B.; Chow, S.Y.; Lai, M.Y.; Wang, W.D.; Lee, K.Y.; Ho, C.S.; Osipowicz, T. ; Chi, D.Z.
Apr-2008HRBS/channeling studies of ultra-thin ITO films on SiMalar, P. ; Chan, T.K. ; Ho, C.S.; Osipowicz, T. 
1999Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical propertiesChua, H.N.; Pey, K.L. ; Siah, S.Y.; Ong, L.Y.; Lim, E.H.; Gan, C.L.; See, K.H. ; Ho, C.S.
27-Feb-1998Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formationHo, C.S.; Pey, K.L.; Wong, H.; Karunasiri, R.P.G. ; Chua, S.J. ; Lee, K.H.; Chan, L.H.
Apr-2008Interface strain study of thin Lu2O3/Si using HRBSChan, T.K. ; Darmawan, P.; Ho, C.S.; Malar, P. ; Lee, P.S.; Osipowicz, T. 
1999Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon linesChua, H.N.; Pey, K.L. ; Siah, S.Y.; Lim, E.H.; Ho, C.S.
5-Jun-2000Nickel-platinum alloy monosilicidation-induced defects in n-type siliconChi, D.Z.; Mangelinck, D.; Dai, J.Y.; Lahiri, S.K.; Pey, K.L. ; Ho, C.S.
2007Phase and texture of Er-germanide formed on Ge(001) through a solid-state reactionLiew, S.L.; Balakrisnan, B.; Ho, C.S.; Thomas, O. ; Chi, D.Z.
2004Quantifying adhesion strength for Cu/Ta barriers/FTEOS dielectric using modified edge lift off testHo, C.S.; Yong, C.; Zhang, B.C.; Lim, C.Y.H. 
2008Quantitative studies of copper diffusion through Ultra-thin ALD tantalum nitride barrier films by high resolution-RBSHo, C.S.; Liew, S.L.; Chan, T.K. ; Malar, P. ; Osipowicz, T. ; Lu, L. ; Lim, C.Y.H. 
2002Software implementation of a computer-vision-based tool condition monitoring systemMannan, M.A. ; Kassim, A. ; Ho, C.S.; Mian, Z.
1-Apr-2012Sustainable spin current in the time-dependent Rashba systemHo, C.S.; Jalil, M.B.A. ; Tan, S.G.
1999Thermal studies on stress-induced void-like defects in epitaxial-CoSi 2 formationHo, C.S.; Pey, K.L. ; Tung, C.H.; Tee, K.C.; Prasad, K.; Saigal, D.; Tan, J.J.L.; Wong, H.; Lee, K.H.; Osipowicz, T. ; Chua, S.J. ; Karunasiri, R.P.G.