Browsing by Author Henry, T.

Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2013Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineeringZhou, Q. ; Koh, S.-M.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
Dec-2011Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implantTong, Y.; Zhou, Q. ; Chua, L.H.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
2011Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressorsKoh, S.-M.; Zhou, Q. ; Thanigaivelan, T.; Henry, T.; Samudra, G.S. ; Yeo, Y.C. 
2010Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reductionKoh, S.-M.; Ng, C.-M.; Liu, P.; Mo, Z.-Q.; Wang, X.; Zheng, H.; Zhao, Z.-Y.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
1-Oct-2011Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser annealKoh, S.-M.; Wang, X.; Thanigaivelan, T.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
2012Silicon-carbon source and drain stressors: Carbon profile design by ion implantationZhou, Q. ; Koh, S.-M.; Tong, Y.; Henry, T.; Erokhin, Y.; Yeo, Y.-C. 
2010Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancementKoh, S.-M.; Wong, H.-S.; Gong, X.; Ng, C.-M.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C.