Browsing by Author Han, R.Q.

Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
2004Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Kwong, D.-L.
Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
Sep-2005Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting trapsSa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
2007Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
2005Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature processKang, J.F.; Yu, H.Y.; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
2004Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulationLiu, X.Y.; Du, G.; Xia, Z.L.; Kang, J.F.; Wang, Y.; Han, R.Q.; Yu, H.Y.; Li, M.-F. ; Kwong, D.L.