Browsing by Author Gong, X.

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Issue DateTitleAuthor(s)
2013(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETsZhan, C.; Wang, W.; Gong, X.; Guo, P.; Liu, B.; Yang, Y.; Han, G. ; Yeo, Y.-C. 
2012A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contactsZhang, X.; Guo, H.X.; Gong, X.; Yeo, Y.-C. 
2010A new self-aligned contact technology for III-V MOSFETsGuo, H.; Zhang, X.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Zhan, C.; Luo, G.-L.; Chang, C.-Y.; Lin, H.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
2012A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETsZhang, X.; Ivana; Guo, H.X.; Gong, X.; Zhou, Q. ; Yeo, Y.-C. 
2013Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)Cheng, R. ; Liu, B.; Guo, P.; Yang, Y.; Zhou, Q. ; Gong, X.; Dong, Y.; Tong, Y.; Bourdelle, K.; Daval, N.; Delprat, D.; Nguyen, B.-Y.; Augendre, E.; Yeo, Y.-C. 
15-Sep-2012COP1 mediates the coordination of root and shoot growth by light through modulation of PIN1- and PIN2-dependent auxin transport in ArabidopsisSassi, M.; Lu, Y.; Zhang, Y. ; Wang, J.; Dhonukshe, P.; Blilou, I.; Dai, M.; Li, J.; Gong, X.; Jaillais, Y.; Yu, X.; Traas, J.; Ruberti, I.; Wang, H.; Scheres, B.; Vernoux, T.; Xu, J. 
Apr-2011Dose-dependent mutual regulation between Wip1 and p53 following UVC irradiationXia, Y.; Yang, Q. ; Gong, X.; Ye, F.; Liou, Y.-C. 
2012Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistorLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2012Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal GateGong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Cheng, R. ; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2010Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETsChin, H.-C.; Gong, X.; Wang, L.; Yeo, Y.-C. 
28-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
2013Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrateLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Chin, H.-C.; Ling, M.-L.; Li, J.; Liu, Y.; Hu, J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2013Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivationGuo, P.; Zhan, C.; Yang, Y.; Gong, X.; Liu, B.; Cheng, R. ; Wang, W.; Pan, J.; Zhang, Z.; Tok, E.S. ; Han, G. ; Yeo, Y.-C. 
2013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
2012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
Dec-2013Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstrationYang, Y.; Han, G.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Yeo, Y.-C. 
2012High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrateHan, G. ; Su, S.; Yang, Y.; Guo, P.; Gong, X.; Wang, L.; Wang, W.; Guo, C.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.C. 
2013High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applicationsLiu, B.; Gong, X.; Cheng, R. ; Guo, P.; Zhou, Q. ; Owen, M.H.S.; Guo, C.; Wang, L.; Wang, W.; Yang, Y.; Yeo, Y.-C. ; Wan, C.-T.; Chen, S.-H.; Cheng, C.-C.; Lin, Y.-R.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.
2012High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drainLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Pulido, M.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
2012High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°CPathrose, J.; Gong, X.; Zou, L.; Koh, J.; Chai, K.T.C.; Je, M.; Xu, Y.P.