Browsing by Author Foo, Y.-L.

Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
200650 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride linerAng, K.-W.; Chui, K.-J.; Chin, H.-C.; Foo, Y.-L.; Du, A.; Deng, W.; Li, M.-F. ; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
Mar-2006Direct observation of single-walled carbon nanotube growth at the atomistic scaleLin, M.; Tan, J.P.Y.; Boothroyd, C.; Loh, K.P. ; Tok, E.S. ; Foo, Y.-L.
Aug-2007Dynamical observation of bamboo-like carbon nanotube growthLin, M.; Tan, J.P.Y.; Boothroyd, C.; Loh, K.P. ; Tok, E.S. ; Foo, Y.-L.
2007Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Tung, C.-H.; Foo, Y.-L.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
10-May-2006Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structureGao, F.; Lee, S.J. ; Balakumar, S.; Du, A.; Foo, Y.-L.; Kwong, D.-L.
2006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
2007Kinetically constraint zero- and one-dimensional heteroepitaxial island growthLi, Z.; Singh, M.K.; Tok, E.S. ; Tan, J.P.Y.; Lin, M.; Foo, Y.-L.
3-Mar-2006Multiwalled carbon nanotubes beaded with ZnO nanoparticles for ultrafast nonlinear optical switchingZhu, Y. ; Elim, H.I. ; Foo, Y.-L.; Yu, T. ; Liu, Y. ; Ji, W. ; Lee, J.-Y. ; Shen, Z.; Wee, A.T.-S. ; Thong, J.T.-L. ; Sow, C.-H. 
2008Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETsWang, G.H.; Toh, E.-H.; Chan, T.K.; Osipowicz, T.; Foo, Y.-L.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
Apr-2011Reduced contact resistance and improved surface morphology of ohmic contacts on gan employing krf laser irradiationWang, G.H.; Wong, T.-C.; Wang, X.-C.; Zheng, H.-Y.; Chan, T.-K. ; Osipowicz, T. ; Foo, Y.-L.; Tripathy, S.
2008Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tripathy, S. ; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C.