Browsing by Author Fitzgerald, E.A.

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Issue DateTitleAuthor(s)
Mar-20021 × 2 optical waveguide filters based on multimode interference for 1.3- and 1.55-μm operationLi, B. ; Chua, S.-J. ; Leitz, C.W.; Fitzgerald, E.A.
20053×2 integrated microphotonic switchesLi, B.; Chua, S.J. ; Fitzgerald, E.A.; Chaudhari, B.; Jiang, S.; Cai, Z.
2007Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growthHartono, H.; Soh, C.B.; Chua, S.J. ; Fitzgerald, E.A.
11-Mar-2013Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescenceSeetoh, I.P.; Soh, C.B.; Fitzgerald, E.A.; Chua, S.J. 
Mar-2004Characterization of graded InGaN/GaN epilayers grown on sapphireSong, T.L.; Chua, S.J. ; Fitzgerald, E.A.; Chen, P.; Tripathy, S.
2005Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etchingVajpeyi, A.P.; Tripathy, S.; Chua, S.J. ; Arokiaraj, J.; Fitzgerald, E.A.
Feb-2009Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matricesChew, H.G.; Zheng, F.; Choi, W.K. ; Chim, W.K. ; Fitzgerald, E.A.; Foo, Y.L.
Jun-2011Design and fabrication of subwavelength nanogratings based light-emitting diodesZhang, L.; Teng, J.; Chua, S.J. ; Fitzgerald, E.A.
2007Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growthSoh, C.B.; Hartono, H. ; Chow, S.Y.; Chua, S.J. ; Fitzgerald, E.A.
8-Sep-2003Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrixKan, E.W.H.; Choi, W.K. ; Leoy, C.C.; Chim, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.
28-Apr-2006Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrixChew, H.G.; Choi, W.K. ; Foo, Y.L.; Zheng, F.; Chim, W.K. ; Voon, Z.J.; Seow, K.C.; Fitzgerald, E.A.; Lai, D.M.Y.
27-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
1-Aug-2005Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicideJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Rahman, Md.A.; Osipowicz, T. ; Tung, C.H.
Aug-2013Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InNSeetoh, I.P.; Soh, C.B.; Fitzgerald, E.A.; Chua, S.J. 
10-May-2006Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contactsJin, L.J.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.
6-Dec-2010Erratum: Growth of single crystal ZnO nanorods on GaN using an aqueous solution method (Applied Physics Letter (2005) 87 (101908))Le, H.Q.; Chua, S.J. ; Koh, Y.W.; Loh, K.P. ; Chen, Z.; Thompson, C.V.; Fitzgerald, E.A.
1-Feb-2006Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))Song, T.L.; Chua, S.J. ; Fitzgerald, E.A.
Jun-2007Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growthHartono, H.; Soh, C.B.; Chua, S.J. ; Fitzgerald, E.A.
Aug-2006Fabrication of germanium nanowires by oblique angle depositionChew, H.G.; Choi, W.K. ; Chim, W.K.; Fitzgerald, E.A.
Aug-2013Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution methodSang, N.X.; Beng, T.C.; Jie, T.; Fitzgerald, E.A.; Jin, C.S.