Browsing by Author Fang, L.W.-W.

Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
2008Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materialsFang, L.W.-W.; Pan, J.-S.; Zhao, R.; Shi, L.; Chong, T.-C.; Samudra, G. ; Yeo, Y.-C. 
28-Mar-2011Band offsets between SiO2 and phase change materials in the (GeTe) x (Sb2 Te3) 1-x pseudobinary systemFang, L.W.-W.; Zhao, R.; Zhang, Z.; Pan, J.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
2009Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentrationFang, L.W.-W.; Zheng, Z.; Pan, J.-S.; Zhao, R.; Li, M.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
15-May-2010Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5Fang, L.W.-W.; Zhao, R.; Li, M.; Lim, K.-G.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
1-Oct-2010Effective method for preparation of oxide-free Ge2Sb 2Te5 surface: An X-ray photoelectron spectroscopy studyZhang, Z.; Pan, J.; Foo, Y.L.; Fang, L.W.-W.; Yeo, Y.-C. ; Zhao, R.; Shi, L.; Chong, T.-C. 
1-Sep-2010Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devicesFang, L.W.-W.; Zhang, Z.; Zhao, R.; Pan, J.; Li, M.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
2009Fermi-level pinning at the interface between metals and nitrogen-doped Ge2 Sb2 Te5 examined by x-ray photoelectron spectroscopyFang, L.W.-W.; Zhao, R.; Pan, J.; Zhang, Z.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
2011Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technologyFang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
May-2011Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reductionFang, L.W.-W.; Zhao, R.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
2008Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materialsFang, L.W.-W.; Pan, J.-S.; Lim, A.E.-J.; Lee, R.T.-P. ; Li, M.; Zhao, R.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
2010Silicides as new electrode/heater for compact integration of phase change memory with CMOSFang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C. ; Yeo, Y.-C. 
Aug-2012Study of interfaces between phase-change material Ge 2Sb 2Te 5 and prevalent complementary metal-oxide semiconductor materials by XPSPan, J.; Fang, L.W.-W.; Zhang, Z.; Yeo, Y.-C. 
1-Jun-2012Temperature-dependent phase separation during annealing of Ge 2Sb 2Te 5 thin films in vacuumZhang, Z.; Pan, J.; Fang, L.W.-W.; Yeo, Y.-C. ; Foo, Y.L.; Zhao, R.; Shi, L.; Tok, E.S.