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Issue Date	Title	Author(s)
2006	100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach	Gao, F.; Balakumar, S.; Rui, L.; Lee, S.J. ; Tung, C.-H.; Du, A.; Sudhiranjan, T.; Hwang, W.S.; Balasubramanian, N.; Lo, P.; Dong-Zhi, C.; Kwong, D.-L.
2006	50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner	Ang, K.-W.; Chui, K.-J.; Chin, H.-C.; Foo, Y.-L.; Du, A.; Deng, W.; Li, M.-F. ; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C.
Sep-2004	A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation	Wu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
2004	Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions	Ang, K.W.; Chui, K.J.; Bliznetsov, V.; Du, A.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C.
2007	Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser deposition	Liu, C.; Chor, E.F. ; Tan, L.S. ; Du, A.
Feb-2006	Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate	Zhu, S. ; Singh, J.; Zhu, C. ; Du, A.; Li, M.F.
2008	First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth	Yin, Z.; Tang, X.; Zhang, J. ; Deny, S.; Teng, J.; Du, A.; Chin, M.K.
10-May-2006	Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure	Gao, F.; Lee, S.J. ; Balakumar, S.; Du, A.; Foo, Y.-L.; Kwong, D.-L.
Feb-2005	Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate	Zhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
Feb-2005	Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate	Zhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
2003	High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications	Hu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
10-May-2006	Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning	Bliznetsov, V.; Kumar, R.; Lin, H.; Ang, K.-W.; Yoo, W.J. ; Du, A.
2005	Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures	Liow, T.-Y.; Tan, K.-M.; Yeo, Y.-C. ; Agarwal, A.; Du, A.; Tung, C.-H.; Balasubramanian, N.
21-Feb-2013	Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor	Ding, Y.; Cheng, R. ; Du, A.; Yeo, Y.-C.
28-Feb-2005	Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors	Ang, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C.
Oct-2004	Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode	Zhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
2008	Morphology and crystal quality of InAs QDs grown by MOVPE using different grqwth modes	Yin, Z.; Tang, X.; Zhang, J. ; Deny, S.; Teng, J.; Du, A.; Chin, M.K.
Aug-2004	N-type Schottky barrier source/drain MOSFET using Ytterbium silicide	Zhu, S. ; Chen, J. ; Li, M.-F. ; Lee, S.J. ; Singh, J.; Zhu, C.X. ; Du, A.; Tung, C.H.; Chin, A.; Kwong, D.L.
29-Nov-2004	Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones	Lin, M.; Loh, K.P. ; Boothroyd, C.; Du, A.
31-May-2012	Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputtering	Deng, W.; Yang, M. ; Chai, J.; Wong, T.I.; Du, A.; Ng, C.M.; Feng, Y. ; Wang, S.

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