Browsing by Author Dong, Y.F.

Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
2006Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfacesDong, Y.F.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.; Wang, S.J.
Sep-2007Band engineering in the high-k dielectrics gate stacksWang, S.J.; Dong, Y.F.; Feng, Y.P. ; Huan, A.C.H.
2006Chemical tuning of band alignments for metal gate/high- κ oxide interfacesDong, Y.F.; Wang, S.J.; Feng, Y.P. ; Huan, A.C.H.
2006Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectricWang, S.J.; Chai, J.W.; Dong, Y.F.; Feng, Y.P. ; Sutanto, N.; Pan, J.S.; Huan, A.C.H.
8-Nov-2004Energy-band alignments at ZrO2/Si, SiGe, and Ge interfacesWang, S.J.; Huan, A.C.H. ; Foo, Y.L.; Chai, J.W.; Pan, J.S.; Li, Q.; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. 
30-Dec-2005Evolution of Fermi level position and Schottky barrier height at Ni/MgO(0 0 1) interfaceMi, Y.Y.; Wang, S.J.; Dong, Y.F.; Chai, J.W.; Pan, J.S.; Huan, A.C.H.; Ong, C.K. 
29-May-2006Evolution of Schottky barrier heights at Ni/HfO2 interfacesLi, Q.; Dong, Y.F.; Wang, S.J.; Chai, J.W.; Huan, A.C.H.; Feng, Y.P. ; Ong, C.K. 
2006Evolution of Schottky barrier heights at Ni/HfO2interfacesLi, Q. ; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. ; Wang, S.J.; Chai, J.W.; Huan, A.C.H.
15-May-2006First-principles studies on initial growth of Ni on MgO(0 0 1) surfaceDong, Y.F.; Wang, S.J.; Mi, Y.Y.; Feng, Y.P. ; Huan, A.C.H.
15-Jul-2005First-principles study of ZrO2 Si interfaces: Energetics and band offsetsDong, Y.F.; Feng, Y.P. ; Wang, S.J.; Huan, A.C.H. 
28-Mar-2005Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfacesDong, Y.F.; Wang, S.J.; Chai, J.W.; Feng, Y.P. ; Huan, A.C.H. 
2006Interface reconstruction of MSi2 Si(001) (M=Co,Ni) from first principlesZhao, F.F.; Feng, Y.P. ; Dong, Y.F.; Zheng, J.Z. 
25-Apr-2005The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculationsWang, S.J.; Dong, Y.F.; Huan, C.H.A. ; Feng, Y.P. ; Ong, C.K.