Browsing by Author Dong, J.R.

Showing results 1 to 15 of 15
Issue DateTitleAuthor(s)
1-Jan-2005Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Tang, L.J.; Wu, Y.H. ; Cho, B.J. ; Xu, X.J.; Dong, J.R.; Song, W.D.
2005Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopyTripathy, S.; Chia, C.K.; Dong, J.R.; Chua, S.J. 
2-Feb-2006Bandgap engineering in semiconductor quantum dotsChia, C.K.; Dong, J.R.; Chua, S.J. ; Tripathy, S.
30-Dec-2006Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Tang, L.J.; Lu, D.; Dong, J.R.
Dec-2001DLTS characterisation of InGaAlP films grown using different V/III ratiosLim, H.F.; Chi, D.Z.; Dong, J.R.; Soh, C.B.; Chua, S.J. 
2001Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTSLim, H.F.; Chua, S.J. ; Dong, J.R.; Chi, D.Z.; Soh, C.B.
2008Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxyChia, C.K.; Dong, J.R.; Chi, D.Z.; Sridhara, A.; Wong, A.S.W.; Suryana, M.; Dalapati, G.K.; Chua, S.J.; Lee, S.J. 
2000Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells claddingTeng, J.H.; Chua, S.J. ; Liu, W.; Wang, X.C.; Choi, H.W.; Dong, J.R.; Li, G.; Braddoc, D.
1-Aug-2004Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavityZhang, X.H.; Dong, J.R.; Chua, S.J. ; Zhang, J.; Yong, A.
Jul-2002MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuationZhou, W.; Chua, S.J. ; Dong, J.R.; Teng, J.H.
1-Jul-2007One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm applicationTeng, J.H.; Dong, J.R.; Chong, L.F.; Chua, S.J. ; Wang, Y.J.; Chen, A. 
15-Mar-2011Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/GeChia, C.K.; Dalapati, G.K.; Chai, Y.; Lu, S.L.; He, W.; Dong, J.R.; Seng, D.H.L.; Hui, H.K.; Wong, A.S.W.; Lau, A.J.Y.; Cheng, Y.B.; Chi, D.Z.; Zhu, Z.; Yeo, Y.C. ; Xu, Z.; Yoon, S.F.
2008Single-lobe operation of a submicron-ridge laser arraysTeng, J.H.; Lim, E.L.; Dong, J.R.; Ang, N.; Chua, S.J.; Shanmugasundaram, K.; Chen, N. 
2007Two-dimensional AlGaInP/GaInP photonic crystal membrane lasers operating in the visible regime at room temperatureChen, A.; Chua, S.J.; Xing, G.C.; Ji, W. ; Zhang, X.H.; Dong, J.R.; Jian, L.K.; Fitzgerald, E.A.
2007Ultrawide band quantum dot light emitting device by postfabrication laser annealingChia, C.K.; Chua, S.J. ; Dong, J.R.; Teo, S.L.