Browsing by Author Colombeau, B.

Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
2007Defect engineering by surface chemical state in boron-doped preamorphized siliconYeong, S.H.; Srinivasan, M.P. ; Colombeau, B.; Chan, L.; Akkipeddi, R.; Kwok, C.T.M.; Vaidyanathan, R.; Seebauer, E.G.
2008Defect engineering for ultrashallow junctions using surfacesSeebauer, E.G.; Kwok, C.T.M.; Vaidyanathan, R.; Kondratenko, Y.V.; Yeong, S.H.; Srinivasan, M.P. ; Colombeau, B.; Chan, L.
2007Defect engineering for ultrashallow junctions using surfacesSeebauer, E.G.; Yeong, S.H.; Srinivasan, M.P. ; Kwok, C.T.M.; Vaidyanathan, R.; Colombeau, B.; Chan, L.
5-Dec-2008Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stabilityMok, K.R.C.; Yeong, S.H.; Colombeau, B.; Benistant, F.; Poon, C.H.; Chan, L.; Srinivasan, M.P. 
2006Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthMok, K.R.C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J.E.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.; Martin-Bragado, I.; Hamilton, J.J.
2006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
2006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
2008The impact of boron halo on phosphorus junction formation and stabilityYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. 
2008The impact of boron halo on phosphorus junction formation and stabilityYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. 
5-Dec-2008The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understandingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Dong, G.; Chan, L.; Srinivasan, M.P. 
2008Understanding of boron junction stability in preamorphized silicon after optimized flash annealingYeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. 
2008Understanding of boron junction stability in preamorphized silicon after optimized flash annealingYeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. 
2008Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Chan, L.; Ramam, A.; Srinivasan, M.P. 
2008Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrateTan, D.X.M.; Pey, K.L.; Ong, K.K.; Colombeau, B.; Ng, C.M.; Yeong, S.H.; Wee, A.T.S. ; Liu, C.J. ; Wang, X.C.