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Browsing by Author Chong, Y.F.

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Issue DateTitleAuthor(s)
29-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
2000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
1-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
2006Dopant activation in subamorphized silicon upon laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
2006Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
1-Oct-2004Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substratesYeo, K.L.; Wee, A.T.S. ; Chong, Y.F.
2004Formation of ultra-shallow p +/n junctions in silicon-on-insulator (SOI) substrate using laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Chong, Y.F.; Yeo, K.L.; Wang, X.C.
4-Mar-2011Hippo pathway-independent restriction of TAZ and YAP by angiomotinChan, S.W.; Lim, C.J.; Chong, Y.F.; Pobbati, A.V.; Huang, C.; Hong, W. 
May-2004Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devicesChong, Y.F.; Gossmann, H.-J.L.; Pey, K.-L.; Thompson, M.O.; Wee, A.T.S. ; Tung, C.H.
11-Nov-2002Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Thompson, M.O.; Tung, C.H.; See, A.
Dec-2001Laser-induced titanium disilicide formation for submicron technologiesChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Shen, Z.X. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
6-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.
1990Miscibility of poly(acetonyl methacrylate) and poly(n-propyl methacrylate) with poly(vinylidene fluoride)Chong, Y.F.; Lee, S.Y. ; Goh, S.H. 
1990Miscibility of poly(acetonyl methacrylate) with some chlorine-containing polymersChong, Y.F.; Lee, S.Y. ; Goh, S.H. 
Feb-1991Miscibility of poly(methoxymethyl methacrylate) and poly(methylthiomethyl methacrylate) with poly(vinylidene fluoride)Goh, S.H. ; Lee, S.Y. ; Chong, Y.F.
5-Aug-1991Miscibility of poly(tetrahydrofurfuryl methacrylate) and poly(tetrahydropyranyl-2-methacrylate) with some chlorine-containing polymersChong, Y.F.; Goh, S.H. 
1991Miscibility of poly(tetrahydropyranyl-2-methacrylate) and poly(cyclohexyl methacrylate) with styrenic polymersChong, Y.F.; Goh, S.H. 
5-Feb-1992Miscibility of some hydroxyl-containing polymers with poly (acetonyl methacrylate), poly(tetrahydropyranyl-2-methacrylate), and poly(cyclohexyl methacrylate)Chong, Y.F.; Goh, S.H. 
1992Phase behaviour of blends of poly(acetonyl methacrylate) with poly(styrene-co-acrylonitrile) and poly(p-methylstyrene-co-acrylonitrile)Chong, Y.F.; Goh, S.H. 
1992Phase behaviour of blends of poly(cyclohexyl methacrylate) with poly(styrene-co-acrylonitrile) and poly(p-methylstyrene-co-acrylonitrile)Chong, Y.F.; Goh, S.H. 
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