Browsing by Author Chong, T.-C.

Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
2008Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materialsFang, L.W.-W.; Pan, J.-S.; Zhao, R.; Shi, L.; Chong, T.-C.; Samudra, G. ; Yeo, Y.-C. 
28-Mar-2011Band offsets between SiO2 and phase change materials in the (GeTe) x (Sb2 Te3) 1-x pseudobinary systemFang, L.W.-W.; Zhao, R.; Zhang, Z.; Pan, J.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
2012Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materialsWang, W.; Loke, D.; Shi, L.; Zhao, R.; Yang, H.; Law, L.-T.; Ng, L.-T.; Lim, K.-G.; Yeo, Y.-C. ; Chong, T.-C.; Lacaita, A.L.
Feb-2007Interface technology of ultra-low flying height and highly stable head-disk interface for perpendicular magnetic recordingLi, H. ; Liu, J. ; Liu, B.; Zhang, M.; Gonzaga, L.; Chong, T.-C.
Aug-2003Laser-Ablation-Induced Concentric Ring StructuresLan, B.; Hong, M.-H.; Chen, S.-X. ; Ye, K.-D.; Wang, Z.-B.; Chen, G.-X. ; Chong, T.-C.
2011Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technologyFang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
May-2011Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reductionFang, L.W.-W.; Zhao, R.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
2008Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materialsFang, L.W.-W.; Pan, J.-S.; Lim, A.E.-J.; Lee, R.T.-P. ; Li, M.; Zhao, R.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
13-Dec-2010Superlatticelike dielectric as a thermal insulator for phase-change random access memoryLoke, D.; Shi, L.; Wang, W.; Zhao, R.; Ng, L.-T.; Lim, K.-G.; Yang, H.; Chong, T.-C.; Yeo, Y.-C. 
24-Jun-2011Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structuresLoke, D.; Shi, L.; Wang, W.; Zhao, R.; Yang, H.; Ng, L.-T.; Lim, K.-G.; Chong, T.-C.; Yeo, Y.-C.