Browsing by Author Chin, A.

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Issue DateTitleAuthor(s)
2004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
2007A novel high-k gate dielectric HfLaO for next generation CMOS technologyLi, M.-F. ; Wang, X.P.; Yu, H.Y.; Zhu, C.X. ; Chin, A.; Du, A.Y.; Shao, J.; Lu, W.; Shen, X.C.; Liu, P.; Hung, S.; Lo, P.; Kwong, D.L.
2004A novel program-erasable capacitor using high-κ AlN dielectricLai, C.H.; Ma, M.W.; Cheng, C.F.; Chin, A.; McAlister, S.P.; Zhu, C.X. ; Li, M.-F. ; Kwong, D.L.
Mar-2005A novel program-erasable high-k AlN-Si MIS capacitorLai, C.H.; Chin, A.; Hung, B.F.; Cheng, C.F.; Yoo, W.J. ; Li, M.F. ; Zhu, C. ; McAlister, S.P.; Kwong, D.-L.
2004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
2004A tunable and program-erasable capacitor on Si with excellent tuning memoryLai, C.H.; Lee, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
2005Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power applicationYu, X.; Zhu, C. ; Yu, M.; Li, M.F. ; Chin, A.; Tung, C.H.; Gui, D.; Kwong, D.-L.
Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
1-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
2006Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectricWang, X.P.; Shen, C.; Li, M.-F. ; Yu, H.Y.; Sun, Y. ; Feng, Y.P. ; Lim, A.; Sik, H.W.; Chin, A.; Yeo, Y.C. ; Lo, P.; Kwong, D.L.
10-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
4-Oct-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
20-Sep-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L.
2004Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B.; Zhu, C. ; Chin, A.; Kwong, D.-L.
Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
Jul-2009Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)Chin, A.; Chang, M.F.; Lin, S.H.; Chen, W.B.; Lee, P.T.; Yeh, F.S.; Liao, C.C.; Li, M.-F. ; Su, N.C.; Wang, S.J.
1-Jul-2005Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devicesWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Chin, A.; Du, A.Y.
Dec-2003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETsYu, D.S.; Wu, C.H.; Huang, C.H.; Chin, A.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
2003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETsHuang, C.H.; Yu, D.S.; Chin, A.; Wu, C.H.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.