Browsing by Author Chia, C.K.

Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
2005Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopyTripathy, S.; Chia, C.K.; Dong, J.R.; Chua, S.J. 
2-Feb-2006Bandgap engineering in semiconductor quantum dotsChia, C.K.; Dong, J.R.; Chua, S.J. ; Tripathy, S.
2008Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAsDalapati, G.K.; Sridhara, A.; Wong, A.S.W.; Chia, C.K.; Lee, S.J. ; Chi, D.
15-Feb-2012Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrateXu, Z.; Yoon, S.F.; Yeo, Y.C. ; Chia, C.K.; Cheng, Y.B.; Dalapati, G.K.
2008Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxyChia, C.K.; Dong, J.R.; Chi, D.Z.; Sridhara, A.; Wong, A.S.W.; Suryana, M.; Dalapati, G.K.; Chua, S.J.; Lee, S.J. 
26-Jul-2004Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" methodChia, C.K.; Chua, S.J. ; Miao, Z.L.; Chye, Y.H.
7-Aug-2013Erratum: Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate (Journal of Applied Physics (2012) 111 (044504))Xu, Z.; Yoon, S.F.; Yeo, Y.C. ; Chia, C.K.; Cheng, Y.B.; Dalapati, G.K.
15-Jul-2004High-quality InAs grown on GaAs substrate with an in situ micro-structured bufferMiao, Z.L.; Chua, S.J. ; Tripathy, S.; Chia, C.K.; Chye, Y.H.; Chen, P.
26-Feb-2007Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structuresChia, C.K.; Chua, S.J. ; Wang, Y.J.; Yong, A.M.; Chow, S.Y.
Apr-2005InAs self-organized quantum dots grown by molecular beam epitaxy using a "nucleation-augmented" methodChia, C.K.; Chua, S.J. ; Miao, Z.; Chye, Y.H.
2007Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrateDalapati, G.K.; Sridhara, A.; Wong, A.S.W.; Chia, C.K.; Lee, S.J. ; Chi, D.
15-Mar-2011Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/GeChia, C.K.; Dalapati, G.K.; Chai, Y.; Lu, S.L.; He, W.; Dong, J.R.; Seng, D.H.L.; Hui, H.K.; Wong, A.S.W.; Lau, A.J.Y.; Cheng, Y.B.; Chi, D.Z.; Zhu, Z.; Yeo, Y.C. ; Xu, Z.; Yoon, S.F.
2007Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rateChia, C.K.; Zhang, Y.W. ; Wong, S.S.; Yong, A.M.; Chow, S.Y.; Chua, S.J. ; Guo, J.
Apr-2011Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reductionGong, X.; Chin, H.-C.; Koh, S.-M.; Wang, L.; Ivana; Zhu, Z.; Wang, B.; Chia, C.K.; Yeo, Y.-C. 
2010Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applicationsDalapati, G.K.; Kumar, A.; Wong, A.S.W.; Kumar, M.K.; Chia, C.K.; Ho, G.W. ; Chi, D.
Oct-2008Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rateChia, C.K.; Zhang, Y.W. ; Wong, S.S.; Chua, S.J. ; Yong, A.M.; Chow, S.Y.
2012Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junctionGuo, P.; Yang, Y.; Cheng, Y.; Han, G. ; Chia, C.K.; Yeo, Y.-C. 
7-Mar-2013Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junctionGuo, P.; Yang, Y.; Cheng, Y.; Han, G. ; Pan, J.; Ivana; Zhang, Z.; Hu, H.; Shen, Z.X.; Chia, C.K.; Yeo, Y.-C. 
2007Ultrawide band quantum dot light emitting device by postfabrication laser annealingChia, C.K.; Chua, S.J. ; Dong, J.R.; Teo, S.L.