1. ScholarBank@NUS
  2. Research Outputs

Browsing by Author Chi, D.Z.

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 1 to 20 of 77  next >
Issue DateTitleAuthor(s)
Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
Apr-2013AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free processLiu, X.; Zhan, C.; Wai Chan, K.; Samuel Owen, M.H.; Liu, W.; Chi, D.Z.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
1-Aug-2004Assignment of deep levels causing yellow luminescence in GaNSoh, C.B.; Chua, S.J. ; Lim, H.F.; Chi, D.Z.; Tripathy, S.; Liu, W.
2003Characterization of high quality continuous GaN films grown on Si-doped cracked GaN templateSoh, C.B.; Zhang, J. ; Chi, D.Z.; Chua, S.J. 
21-May-2001Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodesChi, D.Z.; Mangelinck, D.; Lahiri, S.K.; Lee, P.S. ; Pey, K.L.
2002Comparative study of trap levels observed in undoped and Si-doped GaNSoh, C.B.; Chi, D.Z.; Lim, H.F.; Chua, S.J. 
2005Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contactChi, D.Z.; Lee, R.T.P.; Chua, S.J.; Lee, S.J. ; Ashok, S.; Kwong, D.-L.
26-Mar-2007Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaNSoh, C.B.; Chua, S.J. ; Chen, P.; Chi, D.Z.; Liu, W.; Hartono, H.
2004Direct observations of the nucleation and growth of NiSi 2 on Si (001)Yeadon, M. ; Nath, R.; Boothroyd, C.B.; Chi, D.Z.
Dec-2001DLTS characterisation of InGaAlP films grown using different V/III ratiosLim, H.F.; Chi, D.Z.; Dong, J.R.; Soh, C.B.; Chua, S.J. 
2009Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric StackYa Lim, P.S.; Chi, D.Z.; Lo, G.Q.; Yeo, Y.C. 
Sep-2002Effect of ion implantation on layer inversion of Ni silicided poly-SiLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; Chan, L.
1-Aug-2005Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicideJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Rahman, Md.A.; Osipowicz, T. ; Tung, C.H.
2009Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon filmsLim, P.S.Y.; Lee, R.T.P. ; Sinha, M.; Chi, D.Z.; Yeo, Y.-C. 
2006Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contactsYao, H.B.; Chi, D.Z.; Li, R.; Lee, S.J. ; Kwong, D.-L.
2001Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTSLim, H.F.; Chua, S.J. ; Dong, J.R.; Chi, D.Z.; Soh, C.B.
2008Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxyChia, C.K.; Dong, J.R.; Chi, D.Z.; Sridhara, A.; Wong, A.S.W.; Suryana, M.; Dalapati, G.K.; Chua, S.J.; Lee, S.J. 
Aug-2005Effects of prolonged annealing on NiSi at low temperature (500°C)Anisur, M.R.; Osipowicz, T. ; Chi, D.Z.; Wang, W.D.
10-May-2006Effects of Si(001) surface amorphization on ErSi2 thin filmTan, E.J.; Kon, M.L.; Pey, K.L.; Lee, P.S.; Zhang, Y.W. ; Wang, W.D.; Chi, D.Z.
10-May-2006Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contactsJin, L.J.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Chi, D.Z.
Showing results 1 to 20 of 77  next >