Browsing by Author Cheng, B.

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Issue DateTitleAuthor(s)
1-Feb-2012A unified supervised codebook learning framework for classificationLang, C.; Feng, S.; Cheng, B.; Ni, B.; Yan, S. 
May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
2006Electrophysiological findings in patients with dengue-related maculopathyChia, A.; Mathur, R.; Cheng, B.; Chee, S.P. ; Luu, C.D.
2012Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal GateGong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Cheng, R. ; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
2012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
2012High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrateHan, G. ; Su, S.; Yang, Y.; Guo, P.; Gong, X.; Wang, L.; Wang, W.; Guo, C.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.C. 
2011High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modulesHan, G. ; Su, S.; Zhan, C.; Zhou, Q. ; Yang, Y.; Wang, L.; Guo, P.; Wei, W.; Wong, C.P.; Shen, Z.X.; Cheng, B.; Yeo, Y.-C. 
2009Label to region by bi-layer sparsity priorsLiu, X. ; Cheng, B.; Yan, S. ; Tang, J. ; Chua, T.S. ; Jin, H.
2012Label-to-region with continuity-biased bi-layer sparsity PriorsLiu, X. ; Yan, S. ; Cheng, B.; Tang, J.; Chua, T.-S. ; Jin, H.
2010Learning to photographCheng, B.; Ni, B.; Yan, S. ; Tian, Q.
2013Learning to photograph: A compositional perspectiveNi, B.; Xu, M.; Cheng, B.; Wang, M.; Yan, S. ; Tian, Q.
Apr-2010Learning with ℓ1-graph for image analysisCheng, B.; Yang, J.; Yan, S. ; Fu, Y.; Huang, T.S.
2012Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistorWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
2011Multi-task low-rank affinity pursuit for image segmentationCheng, B.; Liu, G. ; Wang, J.; Huang, Z.; Yan, S. 
2012(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETsWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
Jul-2004Optic disk and retinal characteristics in myopic childrenTong, L. ; Saw, S.-M. ; Chua, W.-H.; Luu, C.; Cheng, B.; Yeo, I.; Wong, E.; Tan, D.; Koh, A.
2013Robust image annotation via simultaneous feature and sample outlier pursuitDong, J.; Cheng, B.; Chen, X.; Chua, T.-S. ; Yan, S.; Zhou, X.
2012Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N +/P junction formation and GeSnO 2 interfacial layerHan, G. ; Su, S.; Wang, L.; Wang, W.; Gong, X.; Yang, Y.; Ivana; Guo, P.; Guo, C.; Zhang, G.; Pan, J.; Zhang, Z.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
2013Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationWang, L.; Su, S.; Wang, W.; Gong, X.; Yang, Y.; Guo, P.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C.