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| Issue Date | Title | Author(s) |
| 2002 | A robust and production worthy addressable array architecture for deep sub-micron MOSFET's matching characterization | Yeo, S.B.; Bordelon, J.; Chu, S.; Li, M.F. ; Tranchina, B.A.; Harward, M.; Chan, L.H.; See, A. |
| Mar-2003 | Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication | Zhao, F.F.; Chen, S.Y.; Shen, Z.X. ; Gao, X.S. ; Zheng, J.Z.; See, A.K.; Chan, L.H. |
| 2005 | Approach to interface roughness of silicide thin films by micro-Raman imaging | Zhao, F.F.; Sun, W.X.; Feng, Y.P. ; Zheng, J.Z. ; Shen, Z.X. ; Pang, C.H.; Chan, L.H. |
| 1998 | Characterisation of metal pattern density and metal stack composition on chlorine residues from the metal etch process | Loong, S.Y.; Lee, H.K. ; Zhou, M.S.; Chan, L.H.; Premachandran, V. |
| Jan-2000 | Characterization of Si(100) surface after high density HBr/Cl2/O2 plasma etching | Low, C.H.; Chin, W.S. ; Tan, K.L. ; Loh, F.C. ; Zhou, M.; Zhong, Q.H.; Chan, L.H. |
| 2001 | Direct formation of C54 phase on the basis of C40 TiSi2 and its applications in deep sub-micron technology | Chen, S.Y.; Shen, Z.X. ; Xu, S.Y. ; See, A.K. ; Chan, L.H.; Li, W.S. |
| 1997 | Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology | Ho, C.S.; Pey, K.L.; Wong, H.; Karunasirf, R.P.G. ; Chua, S.J. ; Lee, K.H.; Tang, Y.; Wong, S.M.; Chan, L.H. |
| 2001 | Enhancement Effect of C40 TiSi2 on the C54 Phase Formation | Chen, S.Y.; Shen, Z.X. ; See, A.K.; Chan, L.H. |
| 1999 | Enhancement or reduction of catalytic dissolution reaction in chemically amplified resists by substrate contaminants | Soo, C.P.; Valiyaveettil, S. ; Huan, A. ; Wee, A. ; Ang, T.C.; Fan, M.H.; Bourdillon, A.J. ; Chan, L.H. |
| Nov-2002 | Excimer laser-induced Ti silicidation to eliminate the fine-line effect for integrated circuit device fabrication | Chen, S.Y.; Shen, Z.X. ; Xu, S.Y. ; Ong, C.K. ; See, A.K.; Chan, L.H. |
| Nov-1999 | Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity | Cho, B.J. ; Ko, L.H.; Nga, Y.A.; Chan, L.H. |
| Jul-1999 | Improvement on lithography pattern profile by plasma treatment | Soo, C.P.; Bourdillon, A.J. ; Valiyaveettil, S. ; Huan, A. ; Wee, A. ; Fan, M.H.; Ang, T.C.; Chan, L.H. |
| 27-Feb-1998 | Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation | Ho, C.S.; Pey, K.L.; Wong, H.; Karunasiri, R.P.G. ; Chua, S.J. ; Lee, K.H.; Chan, L.H. |
| Jun-2000 | Integrity of copper-tantalum nitride metallization under different ambient conditions | Yap, K.P.; Gong, H. ; Dai, J.Y.; Osipowicz, T. ; Chan, L.H.; Lahiri, S.K. |
| 20-Sep-1999 | Laser-induced direct formation of C54 TiSi2 films with fine grains on c-Si substrates | Chen, S.Y.; Shen, Z.X. ; Chen, Z.D.; Chan, L.H.; See, A.K. |
| 1999 | Laser-induced formation of titanium silicides | Chen, S.Y.; Shen, Z.X. ; Chen, Z.D.; See, A.K.; Chan, L.H.; Zhang, T.J.; Tee, K.C. |
| Mar-2003 | Study of titanium suicide formation using spike anneal for integrated chip manufacturing | Tan, C.C.; Lu, L. ; Lai, C.W.; See, A.; Chan, L.H. |
| 25-Dec-2000 | Synthesis and characterization of pure C40 TiSi2 | Chen, S.Y.; Shen, Z.X. ; Li, K.; See, A.K.; Chan, L.H. |
| 2002 | Synthesis of pure C40 TiSi2 for Si wafer fabrication | Chen, S.Y.; Shen, Z.X. ; Xu, S.Y. ; See, A.K. ; Chan, L.H.; Li, W.S. |
| Jan-2004 | Thermal stability study of NiSi and NiSi2 thin films | Zhao, F.F.; Zheng, J.Z. ; Shen, Z.X. ; Osipowicz, T. ; Gao, W.Z.; Chan, L.H. |
