Browsing by Author Chan, L.

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Issue DateTitleAuthor(s)
1985A comparative study of three methods of glycosylated haemoglobin measurementsChan, L.; Thai, A.C.; Yeo, P.P.B.; Cheah, J.S. 
2008A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performanceToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
Feb-2008A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performanceToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2008A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistorsWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Lee, R.T.-P. ; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2005A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistorToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Balasubramanian, N.; Tung, C.-H.; Benistant, F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2007A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancementToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Choy, S.-F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1-Mar-2001A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N resultsHu, Y.F.; Sham, T.K.; Zou, Z.; Xu, G.Q. ; Chan, L.; Yates, B.W.; Bancroft, G.M.
22-Mar-2001Adsorption and reaction of NH3 on Ti/Si(1 0 0)Siew, H.L.; Qiao, M.H.; Chew, C.H. ; Mok, K.F. ; Chan, L.; Xu, G.Q. 
2000An XPS study of silicon oxynitride rapid thermally grown in nitric oxideLai, W.H.; Li, M.F. ; Pan, J.S.; Liu, R. ; Chan, L.; Chua, T.C.
29-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
1998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
Jan-2006Application of molecular dynamics for low-energy ion implantation in crystalline siliconChan, H.Y.; Srinivasan, M.P. ; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Gossmann, H.-J.L.; Harris, M.; Nordlund, K.; Benistant, F.; Ng, C.M.; Gui, D.; Chan, L.
1997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
2000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
1997Characterization of polymer formation during SiO2 etching with different fluorocarbon gases (CHF3, CF4, C 4F8)Loong, S.Y.; Lee, H.K. ; Chan, L.; Zhou, M.S.; Loh, F.C. ; Tan, K.L. 
1-Aug-1998Characterization of titanium silicide by Raman spectroscopy for submicron IC processingLim, E.H.; Karunasiri, G. ; Chua, S.J. ; Shen, Z.X. ; Wong, H.; Pey, K.L.; Lee, K.H.; Chan, L.
Jul-2008Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistorToh, E.-H.; Wang, G.H.; Chan, L.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
Dec-2001Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnectsChu, L.W.; Chim, W.K. ; Pey, K.L. ; Yeo, J.Y.K.; Chan, L.
1997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
2009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C.