Browsing by Author Chai, J.W.

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Issue DateTitleAuthor(s)
Jul-2010Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistorsWang, S.J.; Wong, T.I.; Chen, Q.; Yang, M. ; Wong, L.M.; Chai, J.W.; Zhang, Z.; Pan, J.S.; Feng, Y.P. 
16-Jan-2014Atomic N modified rutile TiO2(110) surface layer with significant visible light photoactivityTao, J.; Yang, M. ; Chai, J.W.; Pan, J.S.; Feng, Y.P. ; Wang, S.J.
2008Band alignment and thermal stability of HfO2 gate dielectric on SiCChen, Q.; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
15-May-2010Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effectsYang, M. ; Deng, W.S.; Chen, Q.; Feng, Y.P. ; Wong, L.M.; Chai, J.W.; Pan, J.S.; Wang, S.J.; Ng, C.M.
2009Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculationChen, Q.; Yang, M. ; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
2006Band-gap energies and structural properties of doped Ba 0.5Sr 0.5TiO 3 thin filmsZheng, Y.B.; Wang, S.J.; Huan, A.C.H.; Tripathy, S.; Chai, J.W.; Kong, L.B. ; Ong, C.K. 
22-Mar-2001Correlation between the corrosion behavior and corrosion films formed on the surfaces of Mg82-xNi18Ndx (x = 0, 5, 15) amorphous alloysYao, H.B.; Li, Y. ; Wee, A.T.S. ; Pan, J.S. ; Chai, J.W.
12-Mar-2001Crystalline zirconia oxide on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Chai, J.W.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
2014Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopyTang, J.; Deng, L.Y.; Tay, C.B. ; Zhang, X.H.; Chai, J.W.; Qin, H.; Liu, H.W.; Venkatesan, T. ; Chua, S.J. 
2007Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGeMi, Y.Y.; Wang, S.J.; Chai, J.W.; Seng, H.L.; Pan, J.S.; Foo, Y.L.; Huan, C.H.A.; Ong, C.K. 
2006Effect of nitrogen doping on optical properties and electronic structures of SrTiO3 filmsMi, Y.Y.; Wang, S.J.; Chai, J.W.; Pan, J.S.; Huan, C.H.A.; Feng, Y.P. ; Ong, C.K. 
2006Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectricWang, S.J.; Chai, J.W.; Dong, Y.F.; Feng, Y.P. ; Sutanto, N.; Pan, J.S.; Huan, A.C.H.
2001Effect of Y addition on the corrosion behavior of melt-spun amorphous Mg-Cu ribbonsYao, H.B.; Li, Y. ; Wee, A.T.S. ; Pan, J.S.; Chai, J.W.
15-Jan-2011Effects of nitrogen incorporation on the electronic structure of rutile- TiO2Chai, J.W.; Yang, M. ; Chen, Q.; Pan, J.S.; Zhang, Z.; Feng, Y.P. ; Wang, S.J.
2006Energy-band alignments at LaAlO3 and Ge interfacesMi, Y.Y.; Wang, S.J.; Chai, J.W.; Pan, J.S.; Huan, A.C.H.; Ning, M.; Ong, C.K. 
8-Nov-2004Energy-band alignments at ZrO2/Si, SiGe, and Ge interfacesWang, S.J.; Huan, A.C.H. ; Foo, Y.L.; Chai, J.W.; Pan, J.S.; Li, Q.; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. 
Oct-2011Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surfaceZhang, Z.; Pan, J.S.; Chai, J.W.; Zhang, J.; Tok, E.S. 
30-Dec-2005Evolution of Fermi level position and Schottky barrier height at Ni/MgO(0 0 1) interfaceMi, Y.Y.; Wang, S.J.; Dong, Y.F.; Chai, J.W.; Pan, J.S.; Huan, A.C.H.; Ong, C.K. 
29-May-2006Evolution of Schottky barrier heights at Ni/HfO2 interfacesLi, Q.; Dong, Y.F.; Wang, S.J.; Chai, J.W.; Huan, A.C.H.; Feng, Y.P. ; Ong, C.K. 
2006Evolution of Schottky barrier heights at Ni/HfO2interfacesLi, Q. ; Dong, Y.F.; Feng, Y.P. ; Ong, C.K. ; Wang, S.J.; Chai, J.W.; Huan, A.C.H.