Browsing by Author Cha, C.L.

Showing results 1 to 15 of 15
Issue DateTitleAuthor(s)
1998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
1997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
1997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
May-2001Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Cha, C.L.; Chan, L.; See, A.K.
1997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
2000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
1999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
1-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
1998Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
2000Improved PECVD pre-metal oxide liner deposition process with low residual charge non-uniformity in film to avoid excessive PIDCha, C.L.; Vassiliev, V.; Chor, E.F. ; See, A.K. 
Aug-1996Interband scattering of channelled electrons suffering high energy lossesBourdillon, A.J. ; Cha, C.L.
Jul-2000Photoresist patterning and ion implantation degradation effects on flash memory device yieldCha, C.L.; Ngo, Q.; Chor, E.F. ; See, A.K.; Lee, T.J.
2000Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
Oct-2001Study of copper suicide retardation effects on copper diffusion in siliconLee, C.S.; Gong, H. ; Liu, R. ; Wee, A.T.S. ; Cha, C.L.; See, A.; Chan, L.
1998Threshold voltage instabilities of fresh flash memory devices caused by plasma chargingCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.