Browsing by Author Bera, L.K.

Showing results 1 to 18 of 18
Issue DateTitleAuthor(s)
Sep-2004Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETsMathew, S.; Bera, L.K.; Balasubramanian, N.; Joo, M.S. ; Cho, B.J. 
Sep-2006Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activationZhang, Q.; Huang, J.; Wu, N.; Chen, G. ; Hong, M. ; Bera, L.K.; Zhu, C. 
2005Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystalsSamanta, S.K. ; Singh, P.K.; Yoo, W.J. ; Samudra, G. ; Yeo, Y.-C. ; Bera, L.K.; Balasubramanian, N.
2005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
Oct-2003Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD processJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Chan, D.S.H. ; Whoang, S.J.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
24-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
Aug-2004Gate dielectrics on strained-Si/SiGe heterolayersMaiti, C.K.; Samanta, S.K. ; Chatterjee, S.; Dalapati, G.K.; Bera, L.K.
2006Germanium incorporation in Hf O2 dielectric on germanium substrateZhang, Q.; Wu, N.; Lai, D.M.Y.; Nikolai, Y.; Bera, L.K.; Zhu, C. 
2007High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal processZhang, Q.C.; Huang, J.D.; Wu, N.; Chen, G.X. ; Hong, M.H. ; Bera, L.K.; Zhu, C. 
2007High quality single crystal Al-catalyzed Si nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.; Cho, B.J. ; Liew, Y.F.; Li, K.; Bera, L.K.; Kwong, D.L.
Nov-2003Improvement of Electrical Properties of MOCVD HfO2 by Multistep DepositionYeo, C.C.; Cho, B.J. ; Joo, M.S. ; Whoang, S.J.; Kwong, D.L.; Bera, L.K.; Mathew, S.; Balasubramanian, N.
2004Laminated metal gate electrode with tunable work function for advanced CMOSBae, S.H.; Bai, W.P.; Wen, H.C.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Yamada, N.; Li, M.F. ; Kwong, D.L.
Sep-2006Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow bodyLim, Y.F.; Xiong, Y.Z.; Singh, N.; Yang, R.; Jiang, Y.; Chan, D.S.H. ; Loh, W.Y.; Bera, L.K.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
2006Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technologyYang, R.; Loh, W.Y.; Yu, M.B.; Xiong, Y-.Z.; Choy, S.F.; Jiang, Y.; Chan, D.S.H. ; Lim, Y.F.; Bera, L.K.; Wong, L.Y.; Li, W.H.; Du, A.Y.; Tung, C.H.; Hoe, K.M.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
Nov-2005Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory applicationSamanta, S.K. ; Tan, Z.Y.L.; Yoo, W.J. ; Samudra, G. ; Lee, S. ; Bera, L.K.; Balasubramanian, N.
Apr-2005Three-layer laminated metal gate electrodes with tunable work functions for CMOS applicationsBai, W.P.; Bae, S.H.; Wen, H.C.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Yamada, N.; Li, M.F. ; Kwong, D.-L.
12-Sep-2005Tungsten nanocrystals embedded in high- k materials for memory applicationSamanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Tok, E.S. ; Bera, L.K.; Balasubramanian, N.
2006Ultra-narrow silicon nanowire gate-all-around CMOS devices: Impact of diameter, channel-orientation and low temperature on device performanceSingh, N.; Lim, F.Y.; Fang, W.W.; Rustagi, S.C.; Bera, L.K.; Agarwal, A.; Tung, C.H.; Hoe, K.M.; Omampuliyur, S.R.; Tripathi, D.; Adeyeye, A.O. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.L.