Browsing by Author Benistant, F.

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Issue DateTitleAuthor(s)
2005A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistorToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Balasubramanian, N.; Tung, C.-H.; Benistant, F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
Jan-2004Analytical damage tables for crystalline siliconChan, H.Y.; Benistant, F.; Srinivasan, M.P. ; Erlebach, A.; Zechner, C.
Jan-2006Application of molecular dynamics for low-energy ion implantation in crystalline siliconChan, H.Y.; Srinivasan, M.P. ; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Gossmann, H.-J.L.; Harris, M.; Nordlund, K.; Benistant, F.; Ng, C.M.; Gui, D.; Chan, L.
5-Dec-2005Bimodal distribution of damage morphology generated by ion implantationMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
2008Comprehensive model of damage accumulation in siliconMok, K.R.C.; Benistant, F.; Jaraiz, M.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. 
5-Dec-2005Comprehensive modeling of ion-implant amorphization in siliconMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
10-May-2006Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperatureChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Mok, K.R.; Chan, L.; Jin, H.M.
5-Dec-2008Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stabilityMok, K.R.C.; Yeong, S.H.; Colombeau, B.; Benistant, F.; Poon, C.H.; Chan, L.; Srinivasan, M.P. 
5-Dec-2005Ion-implant simulations: The effect of defect spatial correlation on damage accumulationMok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.
Apr-2011Mechanism of stress memorization technique (SMT) and method to maximize its effectPandey, S.M.; Liu, J.; Hooi, Z.S.; Flachowsky, S.; Herrmann, T.; Tao, W.; Benistant, F.; See, A.; Chu, S.; Samudra, G.S. 
2006Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthMok, K.R.C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J.E.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.; Martin-Bragado, I.; Hamilton, J.J.
10-May-2006Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline siliconChan, H.Y.; Nordlund, K.; Gossmann, H.-J.L.; Harris, M.; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Srinivasan, M.P. ; Benistant, F.; Ng, C.M.; Chan, L.
2006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
2006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.
Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.
2008The impact of boron halo on phosphorus junction formation and stabilityYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P.