Browsing by Author Balakumar, S.

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 1 to 20 of 33  next >
Issue DateTitleAuthor(s)
2006100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approachGao, F.; Balakumar, S.; Rui, L.; Lee, S.J. ; Tung, C.-H.; Du, A.; Sudhiranjan, T.; Hwang, W.S.; Balasubramanian, N.; Lo, P.; Dong-Zhi, C.; Kwong, D.-L.
2005A material removal rate model for copper abrasive-free CMPHaque, T.; Balakumar, S.; Kumar, A.S. ; Rahman, M. 
2005Advanced ELID process development for grinding silicon wafersIslam, M.M. ; Senthil Kumar, A. ; Balakumar, S.; Lim, H.S. ; Rahman, M. 
3-Mar-2008Characterization of ELID grinding process for machining silicon wafersIslam, M.M. ; Kumar, A.S. ; Balakumar, S.; Lim, H.S. ; Rahman, M. 
2007CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Peng, J.W.; Balakumar, S.; Jiang, Y.; Tung, C.H.; Du, A.Y.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
2006Effects of annealing and temperature on SGOI fabrication using Ge condensationBalakumar, S.; Ong, C.S.; Tung, C.H.; Trigg, A.; Li, M.F.; Kumar, R.; Lo, G.Q.; Balasubramanian, N.; Yeo, Y.C. ; Kwong, D.L.
Aug-2004Enhancement of adhesion strength of Cu layer on single and multi-layer dielectric film stack in Cu/low k multi-level interconnectsBalakumar, S.; Wong, G.; Tsang, C.F.; Hara, T.; Yoo, W.J. 
Sep-2004Enhancement of adhesion strength of Cu seed layer with different thickness in Cu/low-k multilevel interconnectsWang, G.; Jong, Y.W. ; Balakumar, S.; Seah, C.H.; Hara, T.
2006Fabrication of high Ge content SiGe layer on Si by Ge condensation techniqueBalakumar, S.; Jun Wei, T.; Tung, C.H.; Lo, G.Q.; Nguyen, H.S.; Fong, C.S.; Agarwal, A.; Kumar, R.; Balasubramanian, N.; Lee, S.J. ; Kwong, D.L.
2007GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivationGao, F.; Lee, S.J. ; Chi, D.Z.; Balakumar, S.; Kwong, D.-L.
2006GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stackGao, F.; Lee, S.J. ; Li, R.; Whang, S.J. ; Balakumar, S.; Chi, D.Z.; Kean, C.C.; Vicknesh, S.; Tung, C.H.; Kwong, D.-L.
10-May-2006Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structureGao, F.; Lee, S.J. ; Balakumar, S.; Du, A.; Foo, Y.-L.; Kwong, D.-L.
Jun-2008Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation techniqueJiang, Y.; Singh, N.; Liow, T.Y.; Loh, W.Y.; Balakumar, S.; Hoe, K.M.; Tung, C.H.; Bliznetsov, V.; Rustagi, S.C.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
2005High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substratesGao, F.; Balakumar, S.; Balasubramanian, N.; Lee, S.J. ; Tung, C.H.; Kumar, R.; Sudhiranjan, T.; Foo, Y.L.; Kwong, D.-L.
2009Influence of thickness on nanomechanical behavior of Black Diamond™ low dielectric thin films for interconnect and packaging applicationsSekhar, V.N.; Chai, T.C.; Balakumar, S.; Shen, Lu.; Sinha, S.K. ; Tay, A.A.O. ; Yoon, S.W.
Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
2006Investigation of mechanical properties of black diamond™ (low-K) thin films for Cu/low-k interconnect applicationsSekhar, V.N.; Balakumar, S.; Chai, T.C.; Tay, A.A.O. 
2005Investigation on abrasive free Copper chemical mechanical planarization for Cu/low k and Cu/ultra low k interconnectsBalakumar, S.; Haque, T.; Kumar, R.; Kumar, A.S. ; Rahman, M. 
2005Mechanical behavior of Cu/low-k stacks with different barrier layersSekhar, V.N.; Balakumar, S.; Tay, A.A.O. ; Sinha, S.K. 
2007Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrateGao, F.; Li, R.; Chi, D.Z.; Balakumar, S.; Lee, S.J.