Browsing by Author Ang, K.-W.

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Issue DateTitleAuthor(s)
200650 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride linerAng, K.-W.; Chui, K.-J.; Chin, H.-C.; Foo, Y.-L.; Du, A.; Deng, W.; Li, M.-F. ; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
2008A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancementLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Tan, B.L.H.; Tripathy, S.; Oh, S.-A.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
2007Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETsAng, K.-W.; Lin, J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
2007Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
Nov-2007Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
2009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2007Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressorsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
2007Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)Ang, K.-W.; Wong, H.-S.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
Apr-2007Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress linerAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
2007Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressorsAng, K.-W.; Wan, C.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
Nov-2007Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependenceAng, K.-W.; Wan, C.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
10-May-2006Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterningBliznetsov, V.; Kumar, R.; Lin, H.; Ang, K.-W.; Yoo, W.J. ; Du, A.
Aug-2008Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETsLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Yeo, Y.-C. 
28-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C. 
Jan-2010Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platformAng, K.-W.; Liow, T.-Y.; Yu, M.-B.; Fang, Q.; Song, J.; Lo, G.-Q.; Kwong, D.-L. 
2007Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressorsLee, R.T.P. ; Yang, L.-T.; Ang, K.-W.; Liow, T.-Y.; Tan, K.-M.; Wong, A.S.-W.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
Feb-2007n-MOSFET with silicon-carbon source/drain for enhancement of carrier transportChui, K.-J.; Ang, K.-W.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
Jan-2008Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drainLee, R.T.P. ; Yang, L.-T.; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ang, K.-W.; Lai, D.M.Y.; Hoe, K.M.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
Aug-2008Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Samudra, G.; Yeo, Y.-C. 
Jul-2008Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectorsAng, K.-W.; Zhu, S.-Y.; Wang, J. ; Chua, K.-T.; Yu, M.-B.; Lo, G.-Q.; Kwong, D.-L.