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| Issue Date | Title | Author(s) |
| Nov-1992 | Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements | Ling, C.H. ; Yeow, Y.T.; Ah, L.K. |
| 1997 | Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's | Goh, Y.H.; Ah, L.K.; Ling, C.H. |
| 1995 | Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide system | Choi, W.K. ; Chan, Y.M.; Ah, L.K.; Loh, F.C. ; Tan, K.L. ; Ramam, A. |
| May-1995 | Exploratory observations of effect of rapid thermal processing on silicon minority carrier lifetime using laser microwave photoconductance method | Choi, W.K. ; Ah, L.K.; Chan, Y.M.; Raman, A. |
| Jul-1994 | Hot-electron degradation in NMOSFET's: Results from temperature anneal | Ling, C.H. ; Ah, L.K.; Choi, W.K. ; Tan, S.E.; Ang, D.S. |
| 1-Jan-1993 | Logarithmic time dependence of pMOSFET degradation observed from gate capacitance | Ling, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. |
| 1-Jan-1993 | Logarithmic time dependence of pMOSFET degradation observed from gate capacitance | Ling, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. |
| Jul-1991 | Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement | Yeow, Y.T.; Ling, C.H. ; Ah, L.K. |
| Jul-1991 | Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement | Yeow, Y.T.; Ling, C.H. ; Ah, L.K. |
| 1995 | Recombination lifetime in silicon from laser microwave photoconductance decay measurement | Ling, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K. |
| 1995 | Recombination lifetime in silicon from laser microwave photoconductance decay measurement | Ling, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K. |
| 1995 | Study of rf-sputtered yttrium oxide films on silicon by capacitance measurements | Ling, C.H. ; Bhaskaran, J.; Choi, W.K. ; Ah, L.K. |
