Browsing by Author Wang, S.J.

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Issue DateTitleAuthor(s)
28-Mar-2005Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfacesDong, Y.F.; Wang, S.J.; Chai, J.W.; Feng, Y.P. ; Huan, A.C.H. 
2009Impact of oxide defects on band offset at GeO2 /Ge interfaceYang, M. ; Wu, R.Q. ; Chen, Q.; Deng, W.S.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.
2010In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrateChen, Q.; Huang, H. ; Chen, W. ; Wee, A.T.S. ; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
1-Oct-2010In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiCChen, Q.; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
2008Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy studyYang, M. ; Peng, G.W. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Chen, Q.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.
25-Oct-2012Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrateYang, M. ; Chai, J.W.; Wang, Y.Z.; Wang, S.J.; Feng, Y.P. 
2005Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function differenceYu, D.S.; Chin, A. ; Wu, C.H.; Li, M.-F. ; Zhu, C. ; Wang, S.J.; Yoo, W.J. ; Hung, B.F.; McAlister, S.P.
15-May-2010Leakage behavior and conduction mechanisms of Ba(Ti0.85Sn 0.15)O3/Bi1.5Zn1.0Nb 1.5O7 heterostructuresWang, S.J.; Miao, S.; Reaney, I.M.; Lai, M.O. ; Lu, L. 
2005Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory applicationWang, Y.Q.; Singh, P.K.; Yoo, W.J. ; Yeo, Y.C. ; Samudra, G. ; Chin, A.; Hwang, W.S.; Chen, J.H. ; Wang, S.J.; Kwong, D.-L.
2008Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C.C.; Chin, A.; Su, N.C.; Li, M.-F. ; Wang, S.J.
2005Microstructural and high-frequency magnetic characteristics of W -type barium ferrites doped with V 2 O 5Wu, Y.P. ; Ong, C.K. ; Li, Z.W. ; Chen, L. ; Lin, G.Q. ; Wang, S.J.
2005Microstructural and high-frequency magnetic characteristics of W -type barium ferrites doped with V 2 O 5Wu, Y.P. ; Ong, C.K. ; Li, Z.W. ; Chen, L. ; Lin, G.Q. ; Wang, S.J.
20-Dec-2004Photoemission study of energy-band alignment for RuOx/HfO 2/Si systemLi, Q.; Wang, S.J.; Li, K.B.; Huan, A.C.H. ; Chai, J.W.; Pan, J.S.; Ong, C.K. 
21-Mar-2011Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser depositionYang, W.F. ; Wong, L.M.; Wang, S.J.; Sun, H.D.; Ge, C.H.; Lee, A.Y.S.; Gong, H. 
21-Mar-2011Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser depositionYang, W.F. ; Wong, L.M.; Wang, S.J.; Sun, H.D.; Ge, C.H.; Lee, A.Y.S.; Gong, H. 
Oct-2011Pyroelectric materials for dielectric bolometersWang, S.J.; Lu, L. ; Lai, M.O. 
Feb-2003Rapid thermal annealing effect on crystalline yttria-stabilized zirconia gate dielectricsWang, S.J.; Ong, C.K. 
31-Mar-2003Reaction of SiO2 with hafnium oxide in low oxygen pressureWang, S.J.; Lim, P.C.; Huan, A.C.H.; Lu, C.L.; Chai, J.W.; Chow, S.Y.; Pan, J.S.; Li, Q.; Ong, C.K. 
10-Jan-2011Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperatureWong, L.M.; Chiam, S.Y.; Huang, J.Q.; Wang, S.J.; Pan, J.S.; Chim, W.K. 
2019Selective self-assembly of 2,3-diaminophenazine molecules on MoSe2 mirror twin boundariesHe, X. ; Zhang, L. ; Chua, R. ; Wong, P.K.J. ; Arramel, A. ; Feng, Y.P. ; Wang, S.J.; Chi, D.; Yang, M.; Huang, Y.L. ; Wee, A.T.S.