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Wang, S.J.
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Showing results 67 to 86 of 99
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Issue Date
Title
Author(s)
28-Mar-2005
Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfaces
Dong, Y.F.
;
Wang, S.J.
;
Chai, J.W.
;
Feng, Y.P.
;
Huan, A.C.H.
2009
Impact of oxide defects on band offset at GeO2 /Ge interface
Yang, M.
;
Wu, R.Q.
;
Chen, Q.
;
Deng, W.S.
;
Feng, Y.P.
;
Chai, J.W.
;
Pan, J.S.
;
Wang, S.J.
2010
In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
Chen, Q.
;
Huang, H.
;
Chen, W.
;
Wee, A.T.S.
;
Feng, Y.P.
;
Chai, J.W.
;
Zhang, Z.
;
Pan, J.S.
;
Wang, S.J.
1-Oct-2010
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
Chen, Q.
;
Feng, Y.P.
;
Chai, J.W.
;
Zhang, Z.
;
Pan, J.S.
;
Wang, S.J.
2008
Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study
Yang, M.
;
Peng, G.W.
;
Wu, R.Q.
;
Deng, W.S.
;
Shen, L.
;
Chen, Q.
;
Feng, Y.P.
;
Chai, J.W.
;
Pan, J.S.
;
Wang, S.J.
25-Oct-2012
Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrate
Yang, M.
;
Chai, J.W.
;
Wang, Y.Z.
;
Wang, S.J.
;
Feng, Y.P.
2005
Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
Yu, D.S.
;
Chin, A.
;
Wu, C.H.
;
Li, M.-F.
;
Zhu, C.
;
Wang, S.J.
;
Yoo, W.J.
;
Hung, B.F.
;
McAlister, S.P.
15-May-2010
Leakage behavior and conduction mechanisms of Ba(Ti0.85Sn 0.15)O3/Bi1.5Zn1.0Nb 1.5O7 heterostructures
Wang, S.J.
;
Miao, S.
;
Reaney, I.M.
;
Lai, M.O.
;
Lu, L.
2005
Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
Wang, Y.Q.
;
Singh, P.K.
;
Yoo, W.J.
;
Yeo, Y.C.
;
Samudra, G.
;
Chin, A.
;
Hwang, W.S.
;
Chen, J.H.
;
Wang, S.J.
;
Kwong, D.-L.
2008
Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection
Liao, C.C.
;
Chin, A.
;
Su, N.C.
;
Li, M.-F.
;
Wang, S.J.
2005
Microstructural and high-frequency magnetic characteristics of W -type barium ferrites doped with V 2 O 5
Wu, Y.P.
;
Ong, C.K.
;
Li, Z.W.
;
Chen, L.
;
Lin, G.Q.
;
Wang, S.J.
2005
Microstructural and high-frequency magnetic characteristics of W -type barium ferrites doped with V 2 O 5
Wu, Y.P.
;
Ong, C.K.
;
Li, Z.W.
;
Chen, L.
;
Lin, G.Q.
;
Wang, S.J.
20-Dec-2004
Photoemission study of energy-band alignment for RuOx/HfO 2/Si system
Li, Q.
;
Wang, S.J.
;
Li, K.B.
;
Huan, A.C.H.
;
Chai, J.W.
;
Pan, J.S.
;
Ong, C.K.
21-Mar-2011
Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition
Yang, W.F.
;
Wong, L.M.
;
Wang, S.J.
;
Sun, H.D.
;
Ge, C.H.
;
Lee, A.Y.S.
;
Gong, H.
21-Mar-2011
Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition
Yang, W.F.
;
Wong, L.M.
;
Wang, S.J.
;
Sun, H.D.
;
Ge, C.H.
;
Lee, A.Y.S.
;
Gong, H.
Oct-2011
Pyroelectric materials for dielectric bolometers
Wang, S.J.
;
Lu, L.
;
Lai, M.O.
Feb-2003
Rapid thermal annealing effect on crystalline yttria-stabilized zirconia gate dielectrics
Wang, S.J.
;
Ong, C.K.
31-Mar-2003
Reaction of SiO2 with hafnium oxide in low oxygen pressure
Wang, S.J.
;
Lim, P.C.
;
Huan, A.C.H.
;
Lu, C.L.
;
Chai, J.W.
;
Chow, S.Y.
;
Pan, J.S.
;
Li, Q.
;
Ong, C.K.
10-Jan-2011
Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature
Wong, L.M.
;
Chiam, S.Y.
;
Huang, J.Q.
;
Wang, S.J.
;
Pan, J.S.
;
Chim, W.K.
2019
Selective self-assembly of 2,3-diaminophenazine molecules on MoSe2 mirror twin boundaries
He, X.
;
Zhang, L.
;
Chua, R.
;
Wong, P.K.J.
;
Arramel, A.
;
Feng, Y.P.
;
Wang, S.J.
;
Chi, D.
;
Yang, M.
;
Huang, Y.L.
;
Wee, A.T.S.