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	Issue Date	Title	Author(s)
	Apr-2005	Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process	Kang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
	2005	In vitro cytotoxicity of stealth liposomes co-encapsulating doxorubicin and verapamil on doxorubicin-resistant tumor cells	Wang, J.; Goh, B.; Lu, W.; Zhang, Q.; Liu, X.Y.; Chang, A.; Mc, Tan T.; Lee, H.
	Sep-2005	Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps	Sa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
	2-Feb-2009	Nucleation: What happens at the initial stage?	Zhang, T.H. ; Liu, X.Y.
	Feb-2000	Raman and magnetization studies of barium ferrite powder prepared by water-in-oil microemulsion	Chen, M.S.; Shen, Z.X. ; Liu, X.Y.; Wang, J.
	2007	Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications	Kang, J.F.; Yu, H.Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
	2005	Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process	Kang, J.F.; Yu, H.Y.; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
	2004	Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation	Liu, X.Y.; Du, G.; Xia, Z.L.; Kang, J.F.; Wang, Y.; Han, R.Q.; Yu, H.Y.; Li, M.-F. ; Kwong, D.L.
	2005	Strain-induced very low noise RF MOSFETs on flexible plastic substrate	Kao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.
	25-Jan-2012	Switching on fluorescent emission by molecular recognition and aggregation dissociation	Lin, N.; Liu, X.Y.; Diao, Y.Y.; Xu, H.; Chen, C.; Ouyang, X.; Yang, H.; Ji, W.
	1-Jul-2001	Ultrafine zinc oxide powders prepared by precipitation/mechanical milling	Deng, H.M.; Ding, J. ; Shi, Y. ; Liu, X.Y.; Wang, J.
	2005	Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process	Kang, J.F.; Yu, H.Y.; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Kwong, D.-L.

Showing results 3 to 14 of 14 < previous